60 results about "Tubes source" patented technology

This invention relates to one nuclear power stabilizer wave tube weld beam test and position device, which comprises double slide entrance hole supportive position rack on the flange surface, wherein, the position rack comprises entrance hole flange connection socket with double slide set and flexible cover tube in between with radio source tube and sensor cable; flexible cover tube bottom end and radio source position bolt socket are connected with three sensors along 120 degree direction on bolt socket; radio source position socket head and stabilizer are relative to the down supportive central hole; glue racket is fixed on the wave tube outsides stabilizer with radio glue dark case distributed on the glue racket.

The invention discloses a full bridge topology power supply, a control method and communication equipment. An inductance clamping circuit capable of self-adjusting resonance is arranged in a full bridge topology power supply device, inductance value features can be automatically adjusted with the utilization self-adjusted resonance inductance in the inductance clamping circuit and according to the size of passed current, a control circuit controls each switch tube of a full bridge topology, wide zero voltage switch load range, small circulation energy and small duty ratio loss are achieved, and therefore light loading vice side rectifying loss is reduced, light loading converting efficiency is enhanced, performance of flexible switches of a full bridge is improved, wide load range zero voltage opening up of primary side switch tubes of the full bridge is favorable for being achieved, switch loss is reduced, and efficiency of full load range is improved. Besides, the changing rate of primary side current is lowered by the self-adjusted resonance inductance, the vice side rectifier tube voltage spike is clamped through the self-adjusting resonance inductance clamping circuit, and therefore vice side rectifier tube source drain electrode voltage spike is lowered, and application reliability is improved.

This invention discloses one pixel structure, which comprises two metal boards and one transistor tube connected with each other, wherein, the transistor tube grating receives one scan signal; the transistor tube leakage electrode receives one data signal; the transistor tube source electrode has two extensive parts to form one memory capacitor of plane structure.

The invention relates to active pixels of a CMOS image sensor which can transform the working mode, and the image sensor thereof. Each active pixel comprises a first MOS tube source, a second MOS tube source and a third MOS tube gate; the connection points between the first and the second MOS tube sources and the third MOS tube gate are taken as storage nodes; a fifth MOS tube drain, a second MOS tube drain and a third MOS tube drain are connected with an anode of a power supply; a third MOS tube source is connected with a fourth MOS tube drain, a fourth MOS tube source is an output voltage signal, a fourth MOS tube gate is a line gating control line; a second MOS tube gate is a reset signal; a fifth MOS tube gate is a T5 gating signal, and a first MOS tube gate is a T4 gating signal. An exposure control module is respectively connected with the T4, the T5 gating signals and the reset signal of each active pixel; a line decoder is respectively connected with the line gating control line of each active pixel; a multiplexer is respectively connected with the output voltage signal of each active pixel; a 4T / 5T mode switching unit which is respectively connected with the exposure control module through 4T and 5T buses; and the 4T / 5T mode switching unit is connected with the multiplexer through the output data of the image sensor. The active pixels can greatly reduce the imaging noise under the dark light situation.

The invention relates to a simulative switch circuit structure. The simulative switch circuit structure comprises a phase inverter circuit module, a passage geminate transistor circuit module and a breaking point protection circuit module, wherein an input end of the phase inverter circuit module is connected with a control signal input terminal (CRT), the passage geminate transistor circuit module is connected between a signal input end (IN) and a signal output end (OUT), the passage geminate transistor circuit module comprises a third P-channel Metal Oxide Semiconductor (PMOS) field effect tube (P3), an output end of the phase inverter circuit module is connected with a grid electrode of the third PMOS field effect tube (P3), and a substrate of the third PMOS field effect tube (P3) is connected with a power source (VDD) or the signal input end (IN) through the breaking point protection circuit module. According to the simulative switch circuit structure, the phenomenon that an input signal leaks power to the VDD through a parasitic diode which is arranged between a field effect tube source electrode and the substrate is avoided, normal turn-off of the simulative switch in a power source power off condition is achieved, the linkage current from the input end to the power source is avoided, and the simulative switch circuit structure is simple in structure, practical, stable and reliable in working performance, and wide in application range.

The invention discloses an 8-value memory cell embedded in a DRAM storage matrix, and a corresponding conversion circuit thereof. The 8-value memory cell is composed of 3 NMOS tubes, 2 PMOS tubes, a storage capacitor Cj and a power source. An NMOS tube Qm1 and a current source Ij form a source follower FS, wherein a drain of the NMOS tube Qm1 is connected to a direct current power supply VDC, a source electrode of the NMOS tube Qm1 is connected to one terminal of the current source Ij, the other terminal of the current source Ij is connected to a negative direct current power supply VSS, and current from the current source Ij flows from the source electrode of the NMOS tube Qm1 to the negative direct current power supply VSS. A gate electrode of the NMOS tube Qm1 is connected to one terminal of the storage capacitor Cj. The main part of the 8-value memory cell is the NMOS tube source follower. The structure of the 8-value memory cell is simple. With the 8-value memory cell, the characteristics of the DRAM storage matrix are maintained, and BMVC and MBVC are realized. The 8-value memory cell has anti-interference capability and multi-valued information recoverability.

The invention relates to a light-emitting diode (LED) driving circuit. According to the LED driving circuit, current passes through a power supply positive electrode, an energy storage inductor, an LED anode, an LED cathode, a triode collector, a triode emitter, a sampling resistor, a metal oxide semiconductor (MOS) tube source, an MOS tube drain and a power supply negative electrode sequentially; the power supply positive electrode is connected to an MOS tube grid by a self-locking switch and a voltage division circuit; a pin 1 of a constant-current control chip is a power supply input pin and is connected with the power supply positive electrode; a pin 2 is a ground (GND) pin; a pin 3 is an effective operating enabling pin with a high level, is connected with the power supply positive electrode by a resistor R1 and is connected with the pin 2 by a resistor R2; a pin 4 is a current detection pin; a pin 5 is a voltage detection feedback pin, the pin 4 and the pin 5 are connected and are connected with the triode emitter and the sampling resistor respectively, and the other end of the sampling resistor is connected with the pin 2; and a pin 6 is a pulse-width modulation (PWM) driving pin and is connected with a triode base. The LED driving circuit also comprises a filter capacitor which is connected in parallel with an LED.

This invention belongs to integration circuit technique and relates to one metal non-evaporating SRAM by use of metal oxidation as memory medium, which comprises one traditional six-tube SRAM, one memory resistance and one reference resistance, wherein, the memory resistance down electrode is coupled to one upper pmos tube source end and its top electrode coupled to power line; one mmos connection tube is connected to memory resistance and the connection grating electrode is connected to the pmos tube grating; the leakage end is coupled to the memory resistance down electrode and the source end is introduced with one operation signal for memory resistance.

A radiography imaging system for generating images of a pipe assembly includes a radiation source for emitting rays. The pipe assembly includes at least one of a pipe, tubing, and a weld. The radiation source includes a radioactive isotope having an activity level within a range between about 1 Curie and about 40 Curies. The radiation source is positioned adjacent a portion of the pipe assembly. A detector is positioned opposite the radiation source. The portion of the pipe assembly is positioned between the radiation source and the detector such that the rays interact with the portion of the pipe assembly and strike the detector. The detector includes an imaging plate that is activated by illumination with the rays with an exposure within a range between about 0.5 Curie-minute and about 5 Curie-minutes of radiation. The imaging plate has a thickness within a range between about 5 mm and about 15 mm. The detector further includes an imaging unit for generating images based on information from the imaging plate. The imaging unit has a pixel pitch that is within a range between about 25 microns and about 100 microns.

The invention relates to a multilayer floating-gate all-solid-state pH value sensor based on a standard CMOS (Complementary Metal Oxide Semiconductors) technology, comprising a PMOS (P-channel Metal Oxide Semiconductor) field-effect tube consisting of a field-effect tube drain region and a field-effect tube source region, wherein the PMOS field-effect tube is connected with an oxide layer; a multilayer floating-gate structure covers the oxide layer; the multilayer floating-gate structure sequentially comprises a connection layer, a metal layer 1, a through hole layer and a metal layer 2 which are arranged from top to bottom; and the a hydrogen ion sensitive layer compounded by silica and silicon nitride covers the multilayer floating-gate structure. The invention provides the multilayer floating-gate all-solid-state pH value sensor based on the standard CMOS technology, which is compatible with the standard CMOS technology and convenient for integration.

The invention discloses a low-temperature drift band-gap reference circuit based on concave-convex curvature compensation. A primary reference starting module and a band-gap reference core starting module are used for starting a primary reference module and a band-gap reference core module during electrification, and exiting after the primary reference module and the band-gap reference core modulenormally work; the band-gap reference core module forms a betahelp structure with a second triode and a third triode through an NMOS tube source follower connection method or a PMOS tube common-source electrode connection method, so that a problem of overlarge error caused by introduction of a base current is avoided; the primary reference module generates a primary reference voltage with the driving capacity to supply power to the band-gap reference core module and the band-gap reference core starting module, so that the power supply rejection performance of the band-gap reference is improved, and furthermore, the primary reference voltage and the first-order compensation band-gap voltage generated by the band-gap reference core module are superposed through a resistive subdivision mode,the low-temperature drift band-gap reference of the concave-convex curvature compensation can be generated, a temperature drift coefficient is 4 ppm, and the requirements for high-precision application occasions can be well met.

This invention relates to part voltage flexible switch bridge PWM DC-DC exchanger without buffer and relates to zero voltage flexile switch PWM DC-DC exchange technique. This invention comprises first isolation grating field tubes source ends connected to the leakage end of third isolation grating field with ninth capacitor between. This invention adds one lossless buffer circuit on side of transducer to reduce diode reverse voltage impacting.

The invention is concerned with a kind of IGBT full bridge invert power source, relating to four bridge arms made of four IGBT tubes, drive power with low resistance and main output transformer. The grids of T1,T2,T3,T4 to IGBT tubes have drive resistances of R1,R2,R3,R4 in series, and the IGBT drive resistance of the said closed or diagonal bridge arms is different, there are equal capacitances C on both bypasses of the two IGBT tube source and leak pole with larger value of drive resistance, the R1 and R3 are equal to a, R2 and R4 are equal to b or R1 and R2 are equal to a, R3 and R4 are equal to b, while a is equal to (1+beta)b or b is equal to (1+beta)a, betais 20 to 400 percent, and the capacitances C is 200 pF to 10000 pF. The main circuit structure uses full bridge invert power source and unique parameter to perfectly cooperate with main output and main transformer and enhance the reliability of IGBT switch.

The invention provides a high-power-supply-rejection-ratio low dropout regulator. The high power supply rejection ratio low dropout regulator comprises a filter capacitor, a filter resistor, a feedforward amplifier, an error amplifier, a breakover tube, a feedback resistor and a load capacitor and is characterized in that the filter capacitor and the filter resistor form a high-pass filter and areconnected to the feedforward amplifier, and the feedforward amplifier and the error amplifier are connected through a compensation capacitor; when the frequency is below 1 KHZ, the feedforward amplifier is disconnected from a low dropout regulator loop, and when the frequency exceeds 1 KHZ, the feedforward amplifier connects the low dropout regulator loop. In the high-power-supply-rejection-ratiolow dropout regulator, feedforward noise formed by the high-pass filter and the feedforward amplifier offsets channels to establish a new noise channel, the introduced new noise channel can effectively offset a noise channel brought by the low dropout regulator loop and a noise channel introduced by a resistor between an MOS breakover tube source and drain, and thus the performance of the PSRR can increase about 10 dB within the range of 100 KHZ.

This invention discloses a single current bias circuit of current source, which comprises several serial MOS tubes with one source electrode connected to the leakage electrode of the other one. The top MOS tube leakage electrode is connected with the constant current source. The upper MOS tube and its adjacent MOS tube grating are paralleled and connected into the constant source. The bottom MOS tube source electrode is connected with the common end.

The invention discloses an LED drive control circuit for switch dimming. The LED drive control circuit comprises a bridge rectifier circuit and an LED drive control circuit unit, wherein the bridge rectifier circuit is connected with a high-voltage filter capacitor, a first resistor and an LED drive circuit in parallel, the first resistor is connected with a second resistor in series, the second resistor is grounded through a third resistor, the second resistor is connected with the third resistor through the LED drive control circuit unit, the LED drive control circuit unit is connected with the grid of a power tube, and the source of the power tube source is grounded through a fourth resistor. The LED drive control circuit for switch dimming has low overall plan cost, and is small in size, simple and practical in structure, stable and reliable in working performance and wide in application range.

The invention discloses a dimming circuit, comprising a rectification circuit, an LED lamp string, a current detection module, a judgment module, a switching module, a driving module, a sampling circuit, at least one power tube and a power supply module, the input end of the power tube is connected to an external LED The negative electrode of the light string and the output end of the power tube are connected to the current detection module and the sampling circuit. The invention avoids the influence of the capacitance in the circuit on the detection accuracy of the switch by detecting the duration of whether the current flows through the source of the power tube. The problem of inconsistency in discharge time caused by differences in external application devices and misjudgment of switch on-off is avoided. The internal clock timer of the chip controls the preset time, and the dimming consistency is high, which avoids the misjudgment of the detection by the switch interference, and ensures that the switch dimming method can be used in a large area.

This invention belongs to integration circuit technique and relates to one metal non-evaporating SRAM by use of metal oxidation as memory medium, which comprises one traditional six-tube SRAM, one memory resistance and one reference resistance, wherein, the memory resistance down electrode is coupled to one upper pmos tube source end and its top electrode coupled to power line; one mmos connectiontube is connected to memory resistance and the connection grating electrode is connected to the pmos tube grating; the leakage end is coupled to the memory resistance down electrode and the source end is introduced with one operation signal for memory resistance.

The present invention relates to an output overvoltage protection circuit, which includes a voltage detection module and a hysteresis comparator, wherein the voltage detection module includes: a first resistor, a second resistor, The high-voltage isolation tube and the third resistor also include a coupling capacitor connected in parallel to both ends of the second resistor; the output overvoltage protection circuit also includes a sample-and-hold connected between the voltage detection module and the hysteresis comparator module. In the present invention, the parasitic capacitance of the first resistor to the switch node offsets the parasitic capacitance of the second resistor to the ground, and at the same time, increases the coupling capacitance to offset the parasitic capacitance of the source and drain of the high-voltage isolation tube to the ground, so that the detection voltage follows the The voltage of the switch node realizes the purpose of rapidly detecting the voltage of the switch node of the boost chip.

A high-precision voltage programming pixel circuit comprises a first thin film transistor (TFT) switch tube, a second TFT switch tube, a TFT driving tube, a capacitor and a flexible AMOLED (active matrix / organic light-emitting diode). A grid electrode of the TFT driving tube is connected with one end of the capacitor and source electrodes or drain electrodes of both the first TFT switch tube and the second TFT switch tube, a source electrode of the TFT driving tube is connected with a driving tube source electrode power supply, a drain electrode of the TFT driving tube is connected with the source electrode or the drain electrode of the first TFT switch tube and a negative electrode of the flexible AMOLED, the source electrode or the drain electrode of the second TFT switch tube is connected to a signal line, a grid electrode is connected to a second scanning line, a grid electrode of the first TFT switch tube is connected to a first scanning line, a positive electrode of the flexible AMOLED is connected to a voltage source, and the other end of the capacitor is in ground connection. A flexible AMOLED display is provided with the pixel circuit. The pixel circuit can effectively compensate for threshold voltage deviation of a TFT and has the advantages that programming time is short and the error rate is low.

The invention discloses an intelligent LED drive control circuit. The intelligent LED drive control circuit comprises a bridge rectifier circuit and an LED drive control circuit body. The bridge rectifier circuit is connected with a high-voltage filter capacitor, a first resistor and the LED drive control circuit body in parallel. The first resistor is connected with a second resistor in series, the second resistor is connected to the ground through a third resistor, the second resistor and the third resistor are connected with the LED drive control circuit body, the LED drive control circuit body is connected with a power tube grid electrode, and a power tube source electrode is connected to the ground through a fourth resistor. According to the intelligent LED drive control circuit, the cost of the overall scheme is low, the size is small, the structure is simple and practical, the working performance is stable and reliable, and the application range is wide.

The invention belongs to an LED drive circuit and particularly relates to a control circuit of a power MOSFET switching tube source electrode drive topological structure. The control circuit includes a power MOSFET switching tube and a high-voltage switching MOS transistor which is connected with a circuit ground wire through a resistor. The control circuit also includes a time delay logic control circuit, a signal sampling unit, a leading edge blanking unit, a control logic signal unit, a voltage comparator, a hysteresis comparator and an overvoltage protection unit. The control circuit of the power MOSFET switching tube source electrode drive topological structure adopts a source electrode delay sampling technology so that the complexity and area of the LED drive control circuit can be reduced and the manufacturing cost is reduced. The control circuit of the power MOSFET switching tube source electrode drive topological structure also has the advantages of being simple in control method, easy to realize, low in power consumption and high in efficiency.

The invention discloses a master-slave follower type single-edge K value trigger constructing method utilizing the circuit three-element theory and a master-slave follower type single-edge K value trigger circuit. The master-slave follower type single-edge K value trigger composed of a digital follower and an analog follower is obtained by means of the circuit three-element theory, a distinctive three-beat work mode is adopted, clock falling edge triggering is adopted, an identical simplest element level circuit structure is obtained under eight optimum coding, due to the fact that a slave follower is an NMOS tube source electrode follower, only the structure scale of a main follower becomes large along with the increase of the K value which is equal to 4,5,6..., other circuit structures do not change, the main follower is the digital follower composed of a high-pass variable-threshold PMOS tube, the output logic level clamp function is realized, and the anti-jamming capability is high. The master-slave follower type single-edge K value trigger circuit is simple in structure, can serve as a K value static storage cell of a K value SSRAM, and can be used in the VLSI field such as FPGA, CPLD, semi-custom or full-custom ASIC and storer and other digital IC technical fields.

The invention provides a method for increasing operation and amplification gain through negative resistance. A negative resistance unit formed by a plurality of cross coupling NMOS differential pairs is added to the output end of a first operation and amplification grade, and whether the NMOS tube source end of each differential pair is grounded or not is controlled through N-bit operation and amplification negative resistance unit control signals SW generated by an on-chip operation and amplification gain detecting and control loop. Therefore, the negative resistance value can be controlled according to specific conditions in the use process of a chip, and a target gain value can be achieved on the premise of guaranteeing operation and amplification stability. No additional power consumption is added, and great signification is achieved on low-power-consumption design.

The invention relates to a panoramic exposure method with three-source Gamma source combination of a large-scale spherical storage tank, which adopts the irradiation with three-source bound combination, can obtain a basically even panoramic radiation field, completely satisfies the standard fog density and sensitivity requirements of photographic plates, has greatly shortened irradiation time and novel techniques, is simple, convenient, safe, reliable and environment-protective, and can improve the nondestructive examination quality. The panoramic exposure method comprises the following technical steps: a central point of the spherical storage tank is obtained by measurement, a Gamma source head is packed on a nylon belt and positioned at the central point of the spherical storage tank, and the nylon belt is fixed in centers of an upper inlet orifice and a lower inlet orifice and strung by an euphroe, thus avoiding swinging; a source tank is connected with a drive device, and source transmission pipes and a drive hose are straightly positioned with the bend radius no less than the least Phi 500; the three source transmission pipes are bound together, and under the precondition that the geometric unsharpness is ensured, three irradiation heads turn outward in a petal shape so as to reduce mutual influence, increase irradiation area and reduce fade zone.

The invention relates to a control device and method for adjusting the position of an X-ray tube source in cone beam CT and relates to the technical field of medical apparatus, in particular to the technical field of Elekta linear accelerators. The device comprises a first outer socket bar and a second outer socket bar; the first and second outer socket bars disposed in parallel are used for adjusting the position of an X-ray tube source in cone beam CT; a first internal screw rod is disposed inside the first outer socket bar; a second internal screw rod is disposed inside the second outer socket bar; the first and second internal screw rods are both connected with an adjusting device which is connected with a drive device. The control device and method allows for remote control and allows the tube source in cone beam CT motion to be automatically controlled highly efficiently.

The invention discloses a new type high speed prescale circuit which comprises two current mode logic latches (D-Latch) and two MIM (Metal Injection Molding) capacitors or two MOS (Metal Oxide Semiconductor) pipe capacitors which achieve a current shaping function. An MOS sampling tube source common mold point of each of the two D-Latches is respectively connected with an amplitude phase current shaping unit to change amplitudes and phases of sampling tube current ID under a large signal operation state and enlarge phase shift theta which needs to be compensated through a load RC (Remote Control) network and accordingly a higher self-oscillation frequency is obtained and the high speed pre-frequency dividing circuit is provided with a higher working efficiency and a wider frequency-dividing range. The new type high speed prescale circuit is capable of being widely applied to a phase-locked loop module or a related module of a frequency synthesizer in the radio frequency identification field.

An p-type differential electric field micro transducer consists of p channel electric field transducer , p channel depletion type of metal oxide semiconductor tube , N metal oxide semiconductor tube current mirror and p metal oxide semiconductor tube , It features forming N metal oxide semiconductor tube current mirror by two N metal oxide semiconductor tubes , connecting P channel electric field transducer to its depletion type and connecting p metal oxide semiconductor tube source electrode to power source and its grid to bias voltage.

The invention discloses a voltage stabilizer for a medium-high frequency interface of an electronic label. The voltage stabilizer comprises a first resistor, a first PMOS tube and a first NMOS tube, wherein the two ends of the first resistor are respectively connected with the first PMOS tube source electrode and the first NMOS tube drain electrode, the first NMOS tube source electrode is connected with the ground, the first PMOS tube is an MOS tube including a diode for connection, and the first NMOS tube grid is connected with the first PMOS tube drain electrode. A direct-current voltage input line is connected to the line between the first NMOS tube drain electrode and the first resistor, and a direct-current voltage output line is connected to the line between the first PMOS tube source electrode and the first resistor. By means of the structure, the voltage stabilizer is simple in whole structure and convenient to achieve. When being used, the voltage stabilizer can prevent bleed-off voltage from hopping through the action of the first PMOS tube and the first NMOS tube to further avoid demodulation failure.