60 results about "Tubes source" patented technology

This invention discloses one pixel structure, which comprises two metal boards and one transistor tube connected with each other, wherein, the transistor tube grating receives one scan signal; the transistor tube leakage electrode receives one data signal; the transistor tube source electrode has two extensive parts to form one memory capacitor of plane structure.

The invention is concerned with a kind of IGBT full bridge invert power source, relating to four bridge arms made of four IGBT tubes, drive power with low resistance and main output transformer. The grids of T1,T2,T3,T4 to IGBT tubes have drive resistances of R1,R2,R3,R4 in series, and the IGBT drive resistance of the said closed or diagonal bridge arms is different, there are equal capacitances C on both bypasses of the two IGBT tube source and leak pole with larger value of drive resistance, the R1 and R3 are equal to a, R2 and R4 are equal to b or R1 and R2 are equal to a, R3 and R4 are equal to b, while a is equal to (1+beta)b or b is equal to (1+beta)a, betais 20 to 400 percent, and the capacitances C is 200 pF to 10000 pF. The main circuit structure uses full bridge invert power source and unique parameter to perfectly cooperate with main output and main transformer and enhance the reliability of IGBT switch.

The invention discloses a dimming circuit, comprising a rectification circuit, an LED lamp string, a current detection module, a judgment module, a switching module, a driving module, a sampling circuit, at least one power tube and a power supply module, the input end of the power tube is connected to an external LED The negative electrode of the light string and the output end of the power tube are connected to the current detection module and the sampling circuit. The invention avoids the influence of the capacitance in the circuit on the detection accuracy of the switch by detecting the duration of whether the current flows through the source of the power tube. The problem of inconsistency in discharge time caused by differences in external application devices and misjudgment of switch on-off is avoided. The internal clock timer of the chip controls the preset time, and the dimming consistency is high, which avoids the misjudgment of the detection by the switch interference, and ensures that the switch dimming method can be used in a large area.

This invention belongs to integration circuit technique and relates to one metal non-evaporating SRAM by use of metal oxidation as memory medium, which comprises one traditional six-tube SRAM, one memory resistance and one reference resistance, wherein, the memory resistance down electrode is coupled to one upper pmos tube source end and its top electrode coupled to power line; one mmos connectiontube is connected to memory resistance and the connection grating electrode is connected to the pmos tube grating; the leakage end is coupled to the memory resistance down electrode and the source end is introduced with one operation signal for memory resistance.

The present invention relates to an output overvoltage protection circuit, which includes a voltage detection module and a hysteresis comparator, wherein the voltage detection module includes: a first resistor, a second resistor, The high-voltage isolation tube and the third resistor also include a coupling capacitor connected in parallel to both ends of the second resistor; the output overvoltage protection circuit also includes a sample-and-hold connected between the voltage detection module and the hysteresis comparator module. In the present invention, the parasitic capacitance of the first resistor to the switch node offsets the parasitic capacitance of the second resistor to the ground, and at the same time, increases the coupling capacitance to offset the parasitic capacitance of the source and drain of the high-voltage isolation tube to the ground, so that the detection voltage follows the The voltage of the switch node realizes the purpose of rapidly detecting the voltage of the switch node of the boost chip.

A high-precision voltage programming pixel circuit comprises a first thin film transistor (TFT) switch tube, a second TFT switch tube, a TFT driving tube, a capacitor and a flexible AMOLED (active matrix / organic light-emitting diode). A grid electrode of the TFT driving tube is connected with one end of the capacitor and source electrodes or drain electrodes of both the first TFT switch tube and the second TFT switch tube, a source electrode of the TFT driving tube is connected with a driving tube source electrode power supply, a drain electrode of the TFT driving tube is connected with the source electrode or the drain electrode of the first TFT switch tube and a negative electrode of the flexible AMOLED, the source electrode or the drain electrode of the second TFT switch tube is connected to a signal line, a grid electrode is connected to a second scanning line, a grid electrode of the first TFT switch tube is connected to a first scanning line, a positive electrode of the flexible AMOLED is connected to a voltage source, and the other end of the capacitor is in ground connection. A flexible AMOLED display is provided with the pixel circuit. The pixel circuit can effectively compensate for threshold voltage deviation of a TFT and has the advantages that programming time is short and the error rate is low.

The invention is concerned with a kind of IGBT full bridge invert power source, relating to four bridge arms made of four IGBT tubes, drive power with low resistance and main output transformer. The grids of T1,T2,T3,T4 to IGBT tubes have drive resistances of R1,R2,R3,R4 in series, and the IGBT drive resistance of the said closed or diagonal bridge arms is different, there are equal capacitances C on both bypasses of the two IGBT tube source and leak pole with larger value of drive resistance, the R1 and R3 are equal to a, R2 and R4 are equal to b or R1 and R2 are equal to a, R3 and R4 are equal to b, while a is equal to (1+beta)b or b is equal to (1+beta)a, betais 20 to 400 percent, and the capacitances C is 200 pF to 10000 pF. The main circuit structure uses full bridge invert power source and unique parameter to perfectly cooperate with main output and main transformer and enhance the reliability of IGBT switch.

The invention discloses a new type high speed prescale circuit which comprises two current mode logic latches (D-Latch) and two MIM (Metal Injection Molding) capacitors or two MOS (Metal Oxide Semiconductor) pipe capacitors which achieve a current shaping function. An MOS sampling tube source common mold point of each of the two D-Latches is respectively connected with an amplitude phase current shaping unit to change amplitudes and phases of sampling tube current ID under a large signal operation state and enlarge phase shift theta which needs to be compensated through a load RC (Remote Control) network and accordingly a higher self-oscillation frequency is obtained and the high speed pre-frequency dividing circuit is provided with a higher working efficiency and a wider frequency-dividing range. The new type high speed prescale circuit is capable of being widely applied to a phase-locked loop module or a related module of a frequency synthesizer in the radio frequency identification field.