8-value memory cell embedded in dram storage matrix, and corresponding conversion circuit thereof

Abstract

The invention discloses an 8-value memory cell embedded in a DRAM storage matrix, and a corresponding conversion circuit thereof. The 8-value memory cell is composed of 3 NMOS tubes, 2 PMOS tubes, a storage capacitor Cj and a power source. An NMOS tube Qm1 and a current source Ij form a source follower FS, wherein a drain of the NMOS tube Qm1 is connected to a direct current power supply VDC, a source electrode of the NMOS tube Qm1 is connected to one terminal of the current source Ij, the other terminal of the current source Ij is connected to a negative direct current power supply VSS, and current from the current source Ij flows from the source electrode of the NMOS tube Qm1 to the negative direct current power supply VSS. A gate electrode of the NMOS tube Qm1 is connected to one terminal of the storage capacitor Cj. The main part of the 8-value memory cell is the NMOS tube source follower. The structure of the 8-value memory cell is simple. With the 8-value memory cell, the characteristics of the DRAM storage matrix are maintained, and BMVC and MBVC are realized. The 8-value memory cell has anti-interference capability and multi-valued information recoverability.

Description

technical field [0001] The invention belongs to the field of digital integrated circuits, in particular to an 8-valued storage unit embedded in a DRAM storage matrix and a related conversion circuit. Background technique [0002] With the rapid development of MOS integrated circuit technology, the integration scale is getting larger and higher, and VLSI (Very Large Scale Integration) has some shortcomings: ① First, on the VLSI substrate, the wiring takes up more than 70% of the silicon Chip area; in programmable logic devices (such as FPGA and CPLD), there are also a large number of programmable internal wiring (including programmable connection switches, such as fuse switches, anti-fuse switches, floating gate programming components, etc.), To connect each logic function block or input / output to complete a specific function circuit, wiring (including programming connection switches) accounts for a large cost of materials. Reducing the proportion of wiring costs becomes a v...

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Problems solved by technology

[0002] With the rapid development of MOS integrated circuit technology, the integration scale is getting larger and higher, and VLSI (Very Large Scale Integration) has some shortcomings: ① First, on the VLSI substrate, the wiring takes up more than 70% of the silicon Chip area; in programmable logic devices (such as FPGA and CPLD), there are also a large number of programmable internal wiring (including programmable connection switches, such as fuse switches, anti-fuse switches, floating gate programming components, etc.), Connect each logic function block or input / output to complete a specific function circuit, wiring (including programming connection switch) accounts for a large cost of materials

[0006] 2. In realizing multi-valued circuits, including realizing binary-multi-valued conversion circuits and multi-valued-binary conversion circuits, prior art control of MOS tube thresholds has great disadvantages: 1. can only control the amplitude of thresholds, and cannot realize The threshold interval of the MOS tube is turned on. If the MOS tube is required to be turned on only when the input is within the specified voltage range, this voltage range is called a band interval, similar to the MOS tube being turned on only when the input is in the high range, and only when the input is in the high range. In the low range, the MOS tube is turned on

Multi-valued logic gates must have a variety of MOS transistors with open properties to make the circuit structure the simplest. However, the current technology that only controls the threshold amplitude makes the structure of multi-valued circuits very different and complicated, which affects its realization.

②The range of the control threshold is limited (because the ion implantation concentration is limited), and the resolution of the turn-on is very low; and the control threshold range in the process often changes the performance of the MOS tube. The adjustment has an influence on the performance and stability of the tube, the stable V tn and V tp Very important

Therefore, the voltage-type multi-valued circuit is not larger than the 4-valued circuit at present, and the application of more-valued circuits is more difficult

③ It is necessary to add an additional process of ion implantation, and the threshold can only be controlled in the semiconductor manufacturing process, which not only increases the complexity of the process, but also cannot be controlled by the user later, or the threshold cannot be programmed by the user

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