Write-in circuits and read-out circuits of arbitrary-K-value DRAM and eight-value DRAM

Abstract

The invention relates to write-in circuits and read-out circuits of an arbitrary-K-value DRAM and an eight-value DRAM. The write-in circuits and the read-out circuits have same structure characteristics, and the write-in circuits are each designed to provide a multi-value signal increased by delta than write-in circuit input; an output waveform of a memory cell is considered to be smaller than an input waveform or be of an unequal step shape, the read-out circuits are each designed for correction, and an irregular multi-value signal is converted into a regular (equal step) multi-value signal. The write-in circuits and the read-out circuits both have good quantified shaping effects; when a change of a Cj voltage is not greater than an upper new threshold or a lower new threshold, original multi-value information can be easily recovered, so the write-in circuits and the read-out circuits have anti-jamming capability and multi-value information recovery capability. The write-in circuits and the read-out circuits are mainly applied to the fields of VLSI and other digital IC technologies, such as an FPGA, a CPLD, a semi-custom or a full-custom ASIC, a memorizer and the like.

Description

technical field [0001] The present invention is directed to a divisional application with application number: 201110097206.7, and belongs to the field of digital integrated circuits, specifically a writing circuit and a reading circuit of an arbitrary K value and 8-value DRAM. Background technique [0002] With the rapid development of MOS integrated circuit technology, the integration scale is getting larger and higher, and VLSI (Very Large Scale Integration) has some shortcomings: ① First, on the VLSI substrate, the wiring takes up more than 70% of the silicon Chip area; in programmable logic devices (such as FPGA and CPLD), there are also a large number of programmable internal wiring (including programmable connection switches, such as fuse switches, anti-fuse switches, floating gate programming components, etc.), To connect each logic function block or input / output to complete a specific function circuit, wiring (including programming connection switches) accounts for a...

AI Technical Summary

Problems solved by technology

[0002] With the rapid development of MOS integrated circuit technology, the integration scale is getting larger and higher, and VLSI (Very Large Scale Integration) has some shortcomings: ① First, on the VLSI substrate, the wiring takes up more than 70% of the silicon Chip area; in programmable logic devices (such as FPGA and CPLD), there are also a large number of programmable internal wiring (including programmable connection switches, such as fuse switches, anti-fuse switches, floating gate programming components, etc.), Connect each logic function block or input/output to complete a specific function circuit, wiring (including programming connection switch) accounts for a large cost of materials

[0006] 2. In the realization of multi-valued circuits, the existing technology to control the threshold of MOS transistors has great disadvantages: ① the amplitude of the control threshold is limited (because the ion implantation concentration is limited), and the resolution of opening is low; and the amplitude of the control threshold in the process is often Change the performance of the MOS tube, for example, the decrease of the threshold voltage will lead to a sharp increase of the cut-off current, the adjustment of the threshold voltage will affect the perfor

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