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Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology

An all-solid-state, sensor technology, applied in new biological sensing systems and medical fields, can solve problems such as unfavorable integration, solid-state pH sensors cannot be compatible with standard CMOS processes, etc., and achieve the effect of convenient signal processing.

Inactive Publication Date: 2011-09-07
ZHEJIANG UNIV OF TECH
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Problems solved by technology

[0005] In order to overcome the shortcomings of existing solid-state pH sensors that are not compatible with standard CMOS technology and are not conducive to integration, the present invention provides a multi-layer floating gate all-solid-state sensor based on standard CMOS technology that is compatible with standard CMOS technology and easy to integrate. pH sensor

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  • Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology
  • Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology
  • Multilayer floating-gate all-solid-state pH value sensor based on standard CMOS (Complementary Metal Oxide Semiconductors) technology

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[0024] Example: Multi-layer floating gate pH value sensing unit MOS transistor based on standard CMOS process. In the present invention, the "self-alignment" process of polysilicon is used to define the source and drain regions, and the polysilicon gate is reserved. The polysilicon gate is connected to the metal 1 through the contact hole, and the metal 1 is connected to the metal 2 through the through hole, forming a floating multilayer floating gate structure. The passivation layer deposited on the suspension electrode is used as a hydrogen ion sensitive film. Such as figure 1 shown. In addition, in the present invention, a certain isolation window is formed around the sensitive area by means of the pad process of the bonding area, which is used for pH value sensing in the micro area. The present invention uses an interdigitated polysilicon gate structure to increase the transconductance of the MOS transistor. figure 2 The macro model of the new structure sensing unit est...

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Abstract

The invention relates to a multilayer floating-gate all-solid-state pH value sensor based on a standard CMOS (Complementary Metal Oxide Semiconductors) technology, comprising a PMOS (P-channel Metal Oxide Semiconductor) field-effect tube consisting of a field-effect tube drain region and a field-effect tube source region, wherein the PMOS field-effect tube is connected with an oxide layer; a multilayer floating-gate structure covers the oxide layer; the multilayer floating-gate structure sequentially comprises a connection layer, a metal layer 1, a through hole layer and a metal layer 2 which are arranged from top to bottom; and the a hydrogen ion sensitive layer compounded by silica and silicon nitride covers the multilayer floating-gate structure. The invention provides the multilayer floating-gate all-solid-state pH value sensor based on the standard CMOS technology, which is compatible with the standard CMOS technology and convenient for integration.

Description

technical field [0001] The invention relates to an all-solid-state pH sensor, which is suitable for future miniaturized, integrated and intelligent new biosensing systems, medicine and other fields. Background technique [0002] pH sensor has important application value in biochemistry, medicine and other fields. Since the pH concept was proposed in 1909, the development of pH sensors has gone through stages such as glass electrode pH sensors, solid-state sensitive electrode pH sensors, optical addressing potential pH sensors, and field-effect transistor pH sensors. [0003] With the development of microfabrication technology, researchers have combined ion sensitivity, selective electrode fabrication technology with solid-state microelectronics to develop a new type of semiconductor hydrogen ion sensitive device. The new pH sensor unit has dual characteristics of electrochemical and transistor. Compared with the traditional pH sensor, it has the following advantages: (1) Hi...

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Application Information

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IPC IPC(8): G01N27/414
Inventor 施朝霞曹全君彭银生常丽萍
Owner ZHEJIANG UNIV OF TECH
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