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P-shape differential electric-field micro-sensor

A technology of electric field sensor and micro sensor, which is applied in the direction of electrostatic field measurement, etc., can solve the problems of environmental noise measurement results, measurement result changes, etc., and achieve the effect of improving reliability and resolution

Inactive Publication Date: 2005-12-21
SOUTHEAST UNIV
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Problems solved by technology

[0002] When using a single EMOS tube electric field microsensor to test the electric field, since the carrier mobility and the carrier concentration of the doped semiconductor will be affected by the temperature, the measurement results will change with the temperature, and the environmental noise will also affect the measurement. The results have a big impact

Method used

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Embodiment Construction

[0011] An N-type differential electric field microsensor for electric field testing, consisting of a p-channel electric field sensor EPMOS1, a p-channel depletion-type metal oxide semiconductor transistor EPMOS'2, an N-type metal oxide semiconductor transistor current mirror and a P-type Composed of metal oxide semiconductor transistor PMOS5, N-type metal oxide semiconductor transistor current mirror is composed of two N-type metal oxide semiconductor transistors NMOS3, NMOS4, the sources of two N-type metal oxide semiconductor transistors NMOS3, NMOS4 are connected and ground Vss, the gate of which is interconnected and connected to the drain of one of the N-type metal oxide semiconductor transistors NMOS3 and the drain of the N-type metal-oxide semiconductor transistor NMOS3 is connected to the drain of the p-channel electric field sensor EPMOS1. The drain of an N-type metal-oxide semiconductor transistor NMOS4 is connected to the drain of the p-channel depletion-type metal-o...

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Abstract

An p-type differential electric field micro transducer consists of p channel electric field transducer , p channel depletion type of metal oxide semiconductor tube , N metal oxide semiconductor tube current mirror and p metal oxide semiconductor tube , It features forming N metal oxide semiconductor tube current mirror by two N metal oxide semiconductor tubes , connecting P channel electric field transducer to its depletion type and connecting p metal oxide semiconductor tube source electrode to power source and its grid to bias voltage.

Description

technical field [0001] The invention relates to an electric field microsensor, in particular to a P-type differential electric field microsensor used in a microelectromechanical system. Background technique [0002] When using a single EMOS tube electric field microsensor to test the electric field, since the carrier mobility and the carrier concentration of the doped semiconductor will be affected by the temperature, the measurement results will change with the temperature, and the environmental noise will also affect the measurement. The results have a big impact. Contents of the invention [0003] The invention provides an N-type differential electric field microsensor capable of suppressing temperature drift. [0004] The present invention adopts following technical scheme: [0005] An N-type differential electric field microsensor for electric field testing, comprising a p-channel electric field sensor, a p-channel depletion-type metal oxide semiconductor tube, an N...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R29/12
Inventor 黄庆安王立峰秦明茅盘松
Owner SOUTHEAST UNIV
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