Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for producing COB DRAM bit line for preventing it from collapse

A bit line and metal technology, applied in the field of COB-DRAM bit line fabrication, can solve problems such as damage and bit line collapse

Inactive Publication Date: 2007-11-21
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the current COB-DRAM device manufacturing process, problems often occur in the bit line manufacturing process, such as bit line collapse and damage after bit line etching

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing COB DRAM bit line for preventing it from collapse
  • Method for producing COB DRAM bit line for preventing it from collapse
  • Method for producing COB DRAM bit line for preventing it from collapse

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0071] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0072] The bit line of the COB-DRAM preventing bit line collapse of the present invention is fabricated by the "reverse-bit line) process described below.

[0073] Firstly, a silicon substrate is preferred, a polysilicon gate is formed, and source and drain regions and their protective layers are formed, which is referred to as the pre-layer 401 here. Since the fabrication steps of the pre-layer are known technologies, no detailed description will be given here.

[0074] On the pre-layer 401, the following steps are performed in sequence:

[0075] a) Deposit a high-density plasma (HighDensity Plasma, HDP) silicon oxide layer 402 by conventional techniques, such as chemical vapor deposition, for forming a second polysilicon contact hole (Poly TwoContact, P2C), as shown in FIG. 4A ;

[0076] b) Etching the high density plasma (High Density P...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for preparing bit line of COB-DRAM for preventing bit lien from collapse includes carrying out bit line slot-etching after bit line plug metal is formed and the first oxide layer is deposited, filling block layer and bit line metal between bit line metal and oxide layer and carrying out flattening and back-etching to form bit line after bit line space layer is formed then forming hard mask and depositing the second oxide layer.

Description

technical field [0001] The invention relates to a manufacturing method of a bit line of a capacitive dynamic random memory (CapacitorOver Bit Line-Dynamic Random Memory, COB-DRAM) in a semiconductor manufacturing process, in particular to a COB-DRAM capable of solving problems such as bit line collapse and destruction bit line fabrication method. Background technique [0002] Due to cost and high operating speed considerations, the size of the device is getting smaller and smaller. Therefore, more challenges are posed to the manufacturing process of integrated circuits. [0003] In the manufacturing process of the current COB-DRAM device, problems often occur in the bit line manufacturing process, such as bit line collapse and damage after bit line etching. As the device size becomes smaller and smaller, this problem will become more and more serious. [0004] The manufacturing method of the bit line in the prior art is shown in FIGS. 1A-1C . Referring first to FIG. 1A, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20G03F7/26G03F1/00H01L21/00G03F1/26
Inventor 颜进甫罗飞肖德元
Owner SEMICON MFG INT (SHANGHAI) CORP