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All N-type transistor high-side current mirror

A technology of transistor current mirror and transistor, applied in the field of current mirror, can solve the problem that p-type transistor cannot be used

Inactive Publication Date: 2007-11-21
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in some prior art integrated circuit fabrication processes, p-type transistors cannot be used

Method used

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  • All N-type transistor high-side current mirror
  • All N-type transistor high-side current mirror
  • All N-type transistor high-side current mirror

Examples

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Embodiment Construction

[0025] In the following description, various embodiments of the invention are described using npn transistors. It will be obvious to those skilled in the art that the circuit can be extended to other types of n-type transistors, such as NMOS transistors. For simplicity, the following description uses the expression "base, collector, and emitter". It is obvious to a person skilled in the art that the expressions "gate, drain and source" are readily used in place of the above expressions respectively when referring to FET devices such as NMOS transistors.

[0026] Referring to Fig. 1, the basic circuit of a prior art current mirror is shown. The low side mirror is implemented by using n-type transistors 1 and 2 such as npn and NMOS and mirrors the current i_in with reference to ground or negative supply level. The high side mirror is implemented by using p-type transistors 3 and 4 such as pnp and PMOS and mirrors the current i_out with reference to the positive supply level Vd...

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PUM

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Abstract

The present invention relates to an all n-type transistor current mirror for mirroring an input current to an output current. The current mirror comprises an input n-type transistor (T4, QO, Tl) interposed between a positive supply plane (VCC) and an input node (104, 202, 310) with its collector being connected to the positive supply plane (VCC) and its emitter being connected to the input node (104, 202, 310). An output n-type transistor (T3, Q1, T2) is interposed between the positive supply plane (VCC) and an output node (106, 204, 314) with its collector being connected to the positive supply plane (VCC) and its emitter being connected to the output node (106, 204, 314). A feedback circuit equals base-emitter voltages of the input (T4, QO, T1) and the output transistor (T3, Q1, T2) in order to mirror the emitter current of the input transistor (T4, QO, T 1) to the emitter current of the output transistor (T3, Q1, T2). The all n-type transistor current mirror is highly advantageous by overcoming the shortcomings of technologies such as MOBI3, GaAs, and InP of being unable to provide p-type transistors.

Description

technical field [0001] The invention relates to a current mirror used in an integrated circuit, especially a high-side current mirror using only n-type transistors. Background technique [0002] Current mirrors are well known circuits that are widely used in integrating electronics. Improvements in the performance of current mirrors have led to a number of different implementations, the most common being bias circuits and current amplifiers. [0003] Generally, a current mirror is a circuit having an input terminal (input mirror) and an output terminal (output mirror), the input terminal is connected to an input current source, and the input current is mirrored to the output terminal. [0004] Prior art current mirrors basically employ pairs of similar transistors. Low-side mirrors are typically implemented using n-type transistors such as npn and NMOS, and the mirror current is referenced to ground. High side mirrors are typically implemented using p-type transistors suc...

Claims

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Application Information

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IPC IPC(8): G05F3/26
CPCG05F3/262
Inventor 吉乌舍普·格里勒思米哈伊·桑托利努汉斯·布雷克曼斯
Owner NXP BV