Unlock instant, AI-driven research and patent intelligence for your innovation.

High efficiency switch-mode power amplifier

A power amplifier and switch mode technology, applied in the direction of power amplifiers, amplifiers, amplifiers with semiconductor devices/discharge tubes, etc., can solve problems such as low efficiency, amplifiers cannot output high power for communication applications, and limitations

Active Publication Date: 2010-05-12
CREE INC
View PDF18 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the resulting amplifier cannot deliver the high power required for communication applications, especially base station applications, and the efficiency of the device is less than ideal
Specifically, GaAs MESFET devices have limited power density and limited drain voltage, which limits the amount of power they can produce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High efficiency switch-mode power amplifier
  • High efficiency switch-mode power amplifier
  • High efficiency switch-mode power amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The invention is described in more detail below with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. It will be understood that when an element or layer is referred to as being "on" or "connected" or "coupled" to another element or layer, it may be directly on, connected to, or directly on the other element or layer. Or coupled to said another element or layer, intervening elements or layers may also be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A switch mode power amplifier includes a transistor responsive to input signals above 1.0 GHz and which includes one terminal coupled to ground and another terminal conductively coupled to a power source. A resonant circuit coupled the second terminal to an output with a resistive load coupled across the output and ground. When the transistor is turned on the second terminal is coupled to ground and when the transistor is turned off, current from the power supply to the second terminal is steered into internal capacitance of the transistor and causes voltage on the second terminal to rise to amaximum value and then decrease, the voltage at the second terminal being coupled to the output terminal through the resonant circuit. In preferred embodiments, the transistor comprises a compound semiconductor field effect transistor with the first terminal being a source terminal and the second terminal being a drain terminal. The field effect transistor is preferably a compound high electron mobility transistor (HEMT) or compound MESFET, but in other embodiments the transistor can be the compound LDMOS, compound bipolar transistor, or compound MOSFET.

Description

technical field [0001] The present invention relates to power amplifiers, and more particularly to power amplifiers for high frequency signals. Background technique [0002] Switch-mode power amplifiers have attracted a lot of attention in applications that require efficient power amplification of high-frequency signals. Examples of applications for such devices include power amplifiers for wireless communication systems, satellite communication systems, and advanced radar systems. Specifically, digital communication systems such as 3G and 4G PCS systems, WiFi, WiMax, and digital video broadcasting systems all require high-power, high-frequency power amplifiers. For applications requiring high output power, the power amplifier accounts for a significant portion of the total system power consumption. Accordingly, it is desirable to maximize the efficiency of power amplifier circuits in communication systems. [0003] Switch-mode power amplifiers, such as those operating in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F3/217
CPCH03F3/2176H03F2200/222H03F2200/387H03F3/217H03F3/191H03F3/20
Inventor W·L·普里布尔J·W·米利根R·S·彭杰利
Owner CREE INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com