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CMOS image sensor and method for manufacturing thereof

An image sensor and pixel technology, applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of long distance of photodiode and degradation of image characteristics, etc.

Inactive Publication Date: 2010-09-29
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] According to the prior art, since the thickness of the passivation layer including the first insulating layer and the second insulating layer on the uppermost conductive layer of the CIS is very thick, from the condensing part including the color filter layer and the microlens to The distance of the photodiode as the light detection part is very long, so the image characteristics are degraded

Method used

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  • CMOS image sensor and method for manufacturing thereof
  • CMOS image sensor and method for manufacturing thereof
  • CMOS image sensor and method for manufacturing thereof

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Embodiment Construction

[0010] Reference will now be made in detail embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings.

[0011] In the description of embodiments, it will be understood that when a layer (or film) is referred to as being 'on' another layer or substrate, it can be directly on another layer or substrate, or intervening layers may also be present. Further, when a layer is referred to as being 'under' another layer, it can be directly under, and one or more intervening layers may also be present. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0012] figure 1 is a cross-sectional view of the CMOS image sensor according to the embodiment.

[0013] The CMOS image sensor is divided into a pixel portion 102 and a logic pad portion 104 . The CMOS image sensor may include: a substrate 110 on which a first passiva...

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Abstract

An image sensor is provided. The image sensor includes a first passivation layer, a color filter layer, microlenses, an uppermost conducting layer, a second passivation layer, and a third passivation layer. The first passivation layer is formed on a substrate including a predetermined pixel portion and a logic pad portion. The color filter layer and the microlenses are formed on a portion of the first passivation layer corresponding to the pixel portion. The uppermost conducting layer is formed in a portion of the first passivation layer that corresponds to the logic pad portion. The second passivation layer is formed on the first passivation layer corresponding to the logic pad portion to expose a portion of the uppermost conducting layer. The third passivation layer is formed on the second passivation layer to expose the uppermost conducting layer.

Description

Background technique [0001] Generally, an image sensor is a semiconductor device that converts an optical image into an electrical signal. Image sensors may be broadly classified into Charge Coupled Devices (CCDs) and Complementary Metal Oxide Semiconductor (CMOS) Image Sensors (CIS). [0002] The CIS includes a photosensitive diode and a MOS transistor in a unit pixel, and sequentially detects electrical signals from each unit pixel in a switching manner to realize an image. [0003] According to the prior art, since the thickness of the passivation layer including the first insulating layer and the second insulating layer on the uppermost conductive layer of the CIS is very thick, from the condensing part including the color filter layer and the microlens to The distance of the photodiode as the light detecting part is very long, so the image characteristics are degraded. Contents of the invention [0004] Embodiments provide an image sensor and a method of manufacturing...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L23/485H01L21/82H01L21/60
CPCH01L27/14636H01L27/14685H01L27/14627H01L27/146
Inventor 金荣毕
Owner DONGBU HITEK CO LTD