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Method for manufacturing semiconductor device

A technology for semiconductors and devices, applied in the field of manufacturing semiconductor devices, can solve problems such as hard-to-etch selectivity

Inactive Publication Date: 2008-06-25
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is actually difficult to selectively remove the protective film 114 from the target gate electrode 111 by controlling the etching selectivity.

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0030] 3A to 3H are cross-sectional views illustrating a method of manufacturing a semiconductor device according to a first embodiment of the present invention. In the first embodiment, a process is performed in which a plurality of gate electrodes are formed, and a part thereof is further selectively removed.

[0031] Specifically, as shown in FIG. 3A , a polysilicon film 12 and an organic antireflection film 13 are formed on a silicon substrate 10 that has been covered with a gate electrode insulating film 11 . The photoresist layer 14 is formed on the organic anti-reflection film 13 by photolithography. The organic antireflection film 13 is mainly composed of carbon.

[0032] Subsequently, as shown in FIG. 3B , organic antireflective film 13 and polysilicon film 12 are etched by using photoresist layer 14 as a mask, and gate electrode 15 is formed on gate electrode insulating film 11 . After that, as shown in FIG. 3C, the photoresist layer 14 and the organic antireflecti...

no. 2 example

[0053] 6A to 6F are cross-sectional views illustrating a method of manufacturing a semiconductor device according to a second embodiment of the present invention. In the second embodiment, a process of selectively siliciding a part of the polysilicon of the gate electrode is performed in the FUSI process.

[0054] In the second embodiment, as shown in FIG. 6A , a polysilicon electrode 18 , a protective nitride film 19 and side walls 20 are formed on a silicon substrate 10 covered with a gate electrode insulating film 11 . The protective nitride film 19 is formed of silicon nitride, and functions to cover and protect the polysilicon electrode 18 . In the manufacturing method of the semiconductor device of the present embodiment, as will be described in detail later, the protective nitride film 19 formed on a part among the plurality of formed polysilicon electrodes 18 is selectively removed, and the part of the polysilicon electrodes is silicided. 18.

[0055] More specifical...

no. 3 example

[0063] 7A to 7M are cross-sectional views showing a method of manufacturing a semiconductor device in a third embodiment of the present invention. In this third embodiment, when the entire surface of the silicon substrate 10 is covered with a stopper nitride film 21 made of silicon nitride, as shown in FIG. The process of the electrode 18 and the polysilicon electrode 18 in the PMOS region. After silicidation, the polysilicon electrode 18 is used as the gate electrode of the MOS transistor. As is readily understood by those skilled in the art, the reason why the NMOS region and the PMOS region of the polysilicon electrode 18 are silicided separately is to control the work function of the gate electrode formed by silicidation.

[0064] The stopper nitride film 21 has three functions. The first function is to protect the silicon substrate 10 during the patterning of the polysilicon electrodes 18 . The second function is that of an etch stop layer in the case of forming self-a...

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PUM

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Abstract

In a method of manufacturing a semiconductor device, a plurality of structures are formed on a semiconductor substrate, and a coating film is formed over the entire surface of the substrate to cover the plurality of structures. A photoresist layer is formed to have an opening portion above the target structure among the plurality of structures, and by using the photoresist layer as a mask while keeping the substrate in a state covered with the coating film, the opening side is etched. Coat the membrane to expose a portion of the target structure. Also, the target portion which is at least a part of the target structure is etched while leaving the coating film, and the photoresist layer and the coating film are removed.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, in particular to a technique for etching a structure formed on a semiconductor substrate. Background technique [0002] In the manufacturing process of a semiconductor device, there is a case where only a part of a plurality of structures formed on a semiconductor substrate is selectively etched. An exemplary case is a case of forming a gate electrode. In this case, a plurality of gate electrodes are formed at constant intervals, and then a part of the gate electrodes is etched away, or a part of each gate electrode is removed. In order to improve the processing accuracy of the gate electrodes, a process of forming the gate electrodes at one time at constant intervals is effective. [0003] Another example is the case of employing a FUSI (Full Silicide) structure for the gate electrode, as disclosed in Japanese Laid-Open Patent Applications (JP-P2006-100431A and JP-P20...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/8234H01L21/8238H01L21/28
CPCH01L21/32139H01L21/31138H01L21/823828H01L21/31144H01L21/32137H01L21/823437H01L21/31116
Inventor 盛一正成藤田雅人
Owner RENESAS ELECTRONICS CORP