Image pick-up device
A technology of camera device and electric charge, applied in radiation control device, image communication, television, etc., can solve the problems of voltage dispersion deviation, electron multiplying rate dispersion deviation, etc.
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no. 1 approach
[0041] First, the configuration of the CMOS image sensor 100 according to the first embodiment will be described with reference to FIGS. 1 to 8 .
[0042] As shown in FIG. 1 , the CMOS image sensor 100 of the first embodiment includes: an imaging unit 51 including a plurality of pixels 50 arranged in a matrix (row and column); a row selection register 52 ; and a column selection register 53 .
[0043] As shown in FIGS. 2 and 3 , as the structure of the pixels 50 of the CMOS image sensor 100 according to the first embodiment, element isolation regions 2 for isolating the pixels 50 are formed on the surface of the p-type silicon substrate 1 . In addition, on the surface of the p-type silicon substrate 1 of each pixel 50 surrounded by the element isolation region 2, the n - The transfer channel 3 (refer to FIG. 3 ) composed of type impurity regions is formed, and the photodiode portion (PD) 4 and the n + A floating diffusion region (FD) 5 composed of a type impurity region. The...
no. 2 approach
[0084] Referring to FIGS. 13 to 16 , in this second embodiment, unlike the above-mentioned first embodiment, the structure of a CMOS image sensor 200 in which two pixels 150 a and 150 b adjacent in the X direction share a floating propagation region 105 will be described. .
[0085] As shown in FIG. 13 , the floating propagation region 105 of the second embodiment is provided adjacent to the readout gate electrode 15 of the pixel 150 a , the readout gate electrode 15 of the pixel 150 b , and the reset gate electrode 118 . In addition, the floating propagation region 105 is an example of the "holding part" of the present invention.
[0086] In addition, in the second embodiment, the reset gate electrode 118, the reset drain portion 107, the amplification gate electrode 116, the row selection gate electrode 117, and the output portion shared by the pixels 150a and 150b are provided in the boundary region between the pixels 150a and 150b. 108.
[0087]In addition, other configu...
no. 3 approach
[0097] Referring to FIGS. 17 to 20 , in this third embodiment, unlike the above-mentioned second embodiment, the two adjacent pixels 250 a and 250 b in the X direction share a multiplication gate electrode in addition to the floating propagation region 105 . 214 and the structure of the CMOS image sensor 300 of the readout gate electrode 215 .
[0098] As shown in FIG. 17 , the multiplication gate electrode 214 of the third embodiment is provided adjacent to the transfer gate electrode 13 of the pixel 250 a , the transfer gate electrode 13 of the pixel 250 b , and the readout gate electrode 215 . In addition, a readout gate electrode 215 is provided adjacent to the floating propagation region 105 . In addition, other configurations of the multiplication gate electrode 214 and the readout gate electrode 215 are the same as those of the multiplication gate electrode 14 and the readout gate electrode 15 of the first embodiment described above. In addition, the multiplication gat...
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