Accurate measuring method of semiconductor doping distribution

A doping distribution and precise measurement technology, which is applied in semiconductor/solid-state device testing/measurement, etc., can solve problems such as complex implementation, complex equations, and slow convergence, so as to improve convergence speed, avoid Poisson equation, and clear data processing steps Effect

Inactive Publication Date: 2008-08-27
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the complexity of solving the Poisson equation and the slow convergence of this method, the implementation is complicated, which limits its application.

Method used

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  • Accurate measuring method of semiconductor doping distribution
  • Accurate measuring method of semiconductor doping distribution
  • Accurate measuring method of semiconductor doping distribution

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0049] 1. First, establish a multi-sub distribution relation

[0050] by the Poisson equation

[0051] ∂ E ( x ) x = q ϵ [ n ( x ) - N ( x ) ] - - - ( 5 )

[0052] Current Density Equation for Reverse Bias

[0053] J = q D n dn ( x ) dx - qu ...

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Abstract

The invention relates to a precise measuring method for mixed distribution of semiconductors, wherein, actual mixed concentration distribution is obtained by consideration of the influence of an exhausted area on the basis of a measuring result of the prior KMK method and through the iteration convergent correction method, thereby the limit of measuring precision is broken through; a multiple sub-distribution relational expression of a transition region which is obtained by numerical simulation is utilized, thereby repeated solving of a Poisson equation is avoided; a novel convergent formula is put forward, thereby the convergent speed is effectively improved and the problems of 'non-convergence' and 'nonuniqueness' of a result are solved successively; a novel convergent comparison standard is established, thereby the complex counting process for conversion of C-x into C-V is saved. The whole data processing step is clear, simple, convenient and easy to realize.

Description

technical field [0001] The present invention relates to a method for accurate measurement of semiconductor doping profiles using Schottkey C-V characteristics. Background technique [0002] The Schottkey C-V method to measure semiconductor doping distribution has been widely used as a testing standard for semiconductor materials. Before the 1980s, there were many studies on the Schottkey C-V method for measuring doping concentration, but few such papers have been published since then. In view of the accuracy limitation caused by the use of depletion layer approximation in the traditional C-V measurement doping method, many improved schemes have been proposed (D.P.Kennedy, P.C.Murley, W.Kleinfelder.0n the measurement of impurity atom distributions in silicon by the differential capacitance technique. IBM J. Res. Develop., 1968, Sept: 399; D.P. Kennedy, R. R. O'Brien. On the measurement of impurity atom distributions by the differential capacitance technique. IBM J. Res. Deve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 苗欣邵志标李宇海傅懿斌
Owner XI AN JIAOTONG UNIV
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