Accurate measuring method of semiconductor doping distribution

Abstract

The accurate measurement method of semiconductor doping distribution, in the measurement results of the traditional KMK method, considers the influence of the depletion region, and obtains the real doping concentration distribution through the iterative convergence correction method, which breaks through the limitation of measurement accuracy. The multi-sub-distribution relation in the transition region obtained by the simulation avoids the repeated solution of the Poisson equation; a new convergence formula is proposed to effectively improve the convergence speed and successfully solve the "non-convergence" and "non-unique" problems of the results; a new convergence formula is established. Convergence comparison standard, eliminating the complicated calculation process of converting C-x into C-V. The entire data processing steps are clear and easy to implement.

Description

technical field [0001] The present invention relates to a method for accurate measurement of semiconductor doping profiles using Schottkey C-V characteristics. Background technique [0002] The Schottkey C-V method to measure semiconductor doping distribution has been widely used as a testing standard for semiconductor materials. Before the 1980s, there were many studies on the Schottkey C-V method for measuring doping concentration, but few such papers have been published since then. In view of the accuracy limitation caused by the use of depletion layer approximation in the traditional C-V measurement doping method, many improved schemes have been proposed (D.P.Kennedy, P.C.Murley, W.Kleinfelder. On the measurement of impurity atom distributions in silicon by the differential capacitance technique. IBM J. Res. Develop., 1968, Sept: 399; D.P. Kennedy, R. R. O'Brien. On the measurement of impurity atom distributions by the differential capacitance technique. IBM J. Res. Dev...

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