Accurate measuring method of semiconductor doping distribution

A technology of doping distribution and accurate measurement, which is applied in the direction of semiconductor/solid-state device testing/measurement, etc., can solve problems such as complex realization, complex equations, and slow convergence, so as to improve the convergence speed, avoid Poisson equation, and clear data processing steps Effect

Inactive Publication Date: 2009-11-18
XI AN JIAOTONG UNIV
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  • Abstract
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Problems solved by technology

However, due to the complexity of solving the Poisson equation and the slow convergence of this method, the implementation is complicated, which limits its application.

Method used

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  • Accurate measuring method of semiconductor doping distribution
  • Accurate measuring method of semiconductor doping distribution
  • Accurate measuring method of semiconductor doping distribution

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Experimental program
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Embodiment Construction

[0048] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0049] 1. First, establish a multi-sub distribution relation

[0050] by the Poisson equation

[0051] ∂ E ( x ) x = q ϵ [ n ( x ) - N ( x ) ] - - - ( 5 )

[0052] Current Density Equation for Reverse Bias

[0053] J = qD n dn ( x ) dx - qu n ...

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Abstract

The accurate measurement method of semiconductor doping distribution, in the measurement results of the traditional KMK method, considers the influence of the depletion region, and obtains the real doping concentration distribution through the iterative convergence correction method, which breaks through the limitation of measurement accuracy. The multi-sub-distribution relation in the transition region obtained by the simulation avoids the repeated solution of the Poisson equation; a new convergence formula is proposed to effectively improve the convergence speed and successfully solve the "non-convergence" and "non-unique" problems of the results; a new convergence formula is established. Convergence comparison standard, eliminating the complicated calculation process of converting C-x into C-V. The entire data processing steps are clear and easy to implement.

Description

technical field [0001] The present invention relates to a method for accurate measurement of semiconductor doping profiles using Schottkey C-V characteristics. Background technique [0002] The Schottkey C-V method to measure semiconductor doping distribution has been widely used as a testing standard for semiconductor materials. Before the 1980s, there were many studies on the Schottkey C-V method for measuring doping concentration, but few such papers have been published since then. In view of the accuracy limitation caused by the use of depletion layer approximation in the traditional C-V measurement doping method, many improved schemes have been proposed (D.P.Kennedy, P.C.Murley, W.Kleinfelder. On the measurement of impurity atom distributions in silicon by the differential capacitance technique. IBM J. Res. Develop., 1968, Sept: 399; D.P. Kennedy, R. R. O'Brien. On the measurement of impurity atom distributions by the differential capacitance technique. IBM J. Res. Dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
Inventor 苗欣邵志标李宇海傅懿斌
Owner XI AN JIAOTONG UNIV
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