Unlock instant, AI-driven research and patent intelligence for your innovation.

Monitoring system and monitoring method of photoetching machine

A technology of monitoring system and lithography machine, applied in the direction of microlithography exposure equipment, photolithography process exposure device, electrical components, etc., can solve the problems of monitoring and measurement speed influence, waste of resources, etc., to improve work efficiency and reduce Resource consumption and the effect of reducing the amount of manual operations

Inactive Publication Date: 2011-02-02
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] It can be seen that the working principle and process of the 4 wafers of the energy stability monitoring system and the 2 wafers of the focus stability monitoring system are the same; The speed of the measurement is also affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monitoring system and monitoring method of photoetching machine
  • Monitoring system and monitoring method of photoetching machine
  • Monitoring system and monitoring method of photoetching machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0032] please participate figure 2 , the present invention discloses a monitoring system 10 of a lithography machine, the monitoring system 10 includes an energy stability monitoring system 11 and a focus stability monitoring system 12; the energy stability monitoring system 11 completes the energy stability of a lithography machine Monitoring and measurement of key line widths; the focus stability monitoring system 12 completes the stability monitoring of the best focal plane and the measurement of key line widths corresponding to different focal points.

[0033] Both the energy stability monitoring system 11 and the focus stability monitoring system 12 include several chips. In this embodiment, the monitoring system 10 includes four chips 110, 111; according to their different functions, they are divided into shared chip groups and individual chip...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a monitoring system for a photoetching machine, which comprises an energy stability monitoring system and a focal point stability monitoring system. Either of the energy stability monitoring system and the focal point stability monitoring system comprises a plurality of wafers. The energy stability monitoring system shares a group of wafers with the focal point stability monitoring system. Parts of the wafers in the shared group of wafers complete the monitoring of the energy stability of the photoetching machine, the measurement of key line breadths, the monitoring of the stability of the best focal plane, and the measurement of key line breadths corresponding to different focal points. The monitoring system plays a role in the reduction of the resource expenditure, as the energy stability monitoring system and the focal point stability monitoring system share a plurality of wafers. In addition, the total workload of the wafers in the monitoring system is reduced, the work efficiency is improved, and the manual workload of workers is reduced owing to the shared wafers.

Description

technical field [0001] The invention belongs to the technical field of chip lithography, relates to a monitoring system of a lithography machine, and also relates to a monitoring method of energy and focus stability of the lithography machine. Background technique [0002] Photolithography technology is one of the key technologies of integrated circuits, and it is an important economic growth factor in the manufacture of the entire product. The cost of lithography accounts for 35% of the entire manufacturing cost. Lithography technology is also an important reason for the development of Moore's Law for integrated circuits. Without the advancement of lithography technology, it is impossible for integrated circuits to go from micron to deep submicron and then into the nanometer era. [0003] Such as figure 1 As shown, the existing lithography machine monitoring system 10' includes an energy stability monitoring system 11' and a focus stability monitoring system 12'. The ener...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
Inventor 白兰萍敖松泉
Owner SEMICON MFG INT (SHANGHAI) CORP