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Growth device of large size non-core YAG series laser crystal and growth process thereof

A laser crystal and growth device technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of difficulty in obtaining, high cost, and low crystal utilization rate, and achieve coreless, low cost, and crystal yield high effect

Active Publication Date: 2009-01-07
成都东骏激光股份有限公司
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Problems solved by technology

[0002] Regarding the growth technology of YAG series laser crystals, the induction heating iridium crucible pulling method is generally used abroad to grow crystals with high melting point on the convex interface. The crystals grown by this growth technology have cores, so the crystal utilization rate is low, the cost is high, and the diameter is difficult to obtain High quality laser crystal products larger than 30mm
Since the 1970s in China, the research on the growth technology of YAG series laser crystals with convex interface and flat interface has been carried out in China, and some breakthroughs have been obtained. In terms of average power development, it is required to provide a core-free high-concentration YAG series laser crystal with a diameter greater than 30mm

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  • Growth device of large size non-core YAG series laser crystal and growth process thereof

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Embodiment Construction

[0028] As shown in the accompanying drawings, a growth device for a large-scale coreless YAG series laser crystal includes a tray 15 connected to an electrode plate 16 through an alumina pad 19, and molybdenum side insulation screens 10, 11, 10 placed on the tray 15. 12. Molybdenum side insulation screens 10, 11, and 12 are equipped with molybdenum upper insulation screens 5, 6, and 7. The inner side of the molybdenum side insulation screen 12 is equipped with a resistance heater 13. The resistance heater 13 is directly connected to the electrode plate 16. The molybdenum crucible The support 9 is connected with the lower transmission system of the single crystal furnace through the graphite joint 18, the molybdenum table cover 17 is arranged between the graphite joint 18 and the molybdenum crucible support 9, the molybdenum crucible 8 is provided on the molybdenum crucible support 9, and the molybdenum crucible 8 is equipped with a melting pot body 4, the diameter of the molybd...

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Abstract

The invention discloses a grower and a growing method of a laser crystal that belongs to YAS series with large size and no core, which belongs to the crystallization technology of the laser crystal. The invention comprises the grower adopting a Mo crucible pulling method heated by resistance and the crystal growing method comprising two procedures and four phases. The laser crystal of YAS series provided by the invention has large size of 35 to 50mm, high concentration (reaching 2.0at percent), no core, no dislocation and no scattering. In addition, the growing technology is stable; growing cycle is short; cost is low; and the yield of the crystal is high with above 85 percent.

Description

technical field [0001] The invention relates to the field of laser crystal crystallization technology. Background technique [0002] Regarding the growth technology of YAG series laser crystals, the induction heating iridium crucible pulling method is generally used abroad to grow crystals with high melting point on the convex interface. The crystals grown by this growth technology have cores, so the crystal utilization rate is low, the cost is high, and the diameter is difficult to obtain High-quality laser crystal products larger than 30mm. Since the 1970s in China, the research on the growth technology of YAG series laser crystals with convex interface and flat interface has been carried out in China, and some breakthroughs have been obtained. In terms of average power development, it is required to provide a core-free high-concentration YAG series laser crystal with a diameter greater than 30mm. Contents of the invention [0003] The object of the present invention i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B15/00
Inventor 周世斌汤海涛罗文科宋玉玲
Owner 成都东骏激光股份有限公司
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