32results about How to "No dislocation" patented technology

The invention relates to an electroplated amorphous state nickel-based alloy corrosion-resistant wear-resistant oil pipe, and belongs to the field of oil field oil pipes. The inner surface of the oil pipe is electroplated with an amorphous state nickel-based alloy corrosion-resistant wear-resistant protection layer. The thickness of the protection layer is 20-50 microns. The protection layer is electroplated by the steps of oil removing, water washing, acid washing, water washing, activating, deionized water cleaning, electroplating, water washing and thermal treatment. Treatment is performed in oil removing liquid for 5-10 minutes; in acid washing, an oxide film is removed from a sulfur solution till the natural color of metal is exposed; in electroplating, nickel alloy electroplating liquid is adopted, the PH value is adjusted to 2-6 by using nickel carbonate, the temperature is more than or equal to 60 DEG C, the current density is 2-8 A/dm<2>, and the electroplating time is 2 hours; in thermal treatment, the temperature is kept at 200-300 DEG C for 1.5 hours. The oil pipe has the advantages of high microhardness, resistance to acid and alkali corrosion, high wear resistance and long service life.

The invention discloses a guide system for hip replacement and a using method thereof. The guide system comprises a handle, a guide connecting rod, an acetabular cup connector and a sleeve. The lower end of the handle is connected with the acetabular cup connector. One end of the guide connecting rod is connected with the side close to the upper end of the handle, a sleeve hole is formed in the other end of the guide connecting rod, and the sleeve is nested into the sleeve hole. The acetabular cup connector comprises a mounting shaft which can be connected with an acetabular cup in a rotating mode, and the center axis of the sleeve is roughly overlapped with the axis of the mounting shaft. According to the guide system for hip replacement and the using method thereof, the guide system is easy to assemble and disassemble and convenient, quick and accurate to use, the completion time of minimally invasive surgery is greatly shortened, any muscle and any joint capsule do not need to be cut off in the operation process, an acetabular component can be accurately positioned, inserted and pressed in a matched mode, and dislocation can be avoided.

The invention discloses a preparation method of an amorphous alloy-based metal micrometer tube. The preparation method comprises the following steps: (1) preparing an amorphous alloy thin film; (2) performing surface treatment on the amorphous alloy thin film; (3) preparing a template; (4) folding the surface, subjected to the surface treatment, of the amorphous alloy thin film with the template, and performing thermoplastic embossing; (5) performing unloading: taking down the template and amorphous alloy when the surface of amorphous alloy is attached to the template, and forming a metal micrometer tube structure corresponding to the template; (6) performing demolding: separating amorphous alloy from the template; (7) collecting to obtain the metal micrometer tube. The preparation method is easy to operate, high in forming efficiency, and low in time consumption and cost; the prepared metal micrometer tube has the advantages of high precision, high structural controllability, high intensity, high corrosion resistance and high wear resistance performance; therefore, the preparation method has extremely high application value and is very suitable for being popularized.

The invention discloses a device and a method for preparing single crystal germanium by a Czochralski method. The device comprises a germanium single crystal growth furnace, wherein a crucible is arranged in a cavity of the furnace; a heating device is arranged around crucible, wherein the cross section of the heating device in the single crystal pulling direction is of a symmetrical structure like a pair of round brackets, so that the crucible is enclosed by the heating device; the heating device is divided into an upper heater and a lower heater, wherein the included angle between the upperheater and the lower heater is 110-160 degrees, and a plurality of high-frequency eddy current induction coils which are uniformly distributed from top to bottom are arranged in the upper heater andthe lower heater so as to control the axial and radial gradients of a temperature field around a single crystal. The device disclosed by the invention can be used for regulating and controlling the preparation process of single crystal germanium according to production requirements, and has extremely high operation flexibility and automation potential. The prepared crystal is good in crystallization property, free of defects such as cracking, dislocation, bubbles, inclusions and scattering and high in single crystal repetition rate, and a good crystal growth effect is achieved.

The invention provides a preparation method of a nano-porous Ru-Fe-Co alloy with high ammonia borane hydrolysis hydrogen production catalytic activity. The preparation method comprises the following steps: preparing a Fe-Co-Ru-B amorphous alloy strip precursor by adopting a single-roller melt-spinning method; and carrying out dealloying on the precursor through a chemical or electrochemical process in an acid environment of 25-80 DEG C to prepare the nano-porous Ru-Fe-Co alloy which is composed of a single close-packed hexagonal phase and has an average pore size of 5-11 nm and a pore wall size of 10-20 nm. The method is simple in process, short in flow, efficient and energy-saving, the pore size of the nano-porous alloy can be regulated and controlled, and the Ru-Fe-Co nano-porous alloy obtained by combining the high specific surface area characteristic of the nano-porous structure and the dual-function effect between Ru-Fe and Co has high ammonia borane hydrolysis hydrogen production catalytic activity, and the catalyst has an application prospect in the field of ammonia borane hydrolysis hydrogen production catalysts.

The invention discloses a roller lining installation positioning device and method. The device comprises a support, a positioning shaft, multiple guide keys and a pressing block. The support is supported on a diesel engine cam shaft corresponding cam base circle, the lower end of the positioning shaft is supported on the upper side of the support, one side of the positioning shaft is provided withan axially-through first guide groove, the multiple guide keys are axially overlapped in the lower end of the first guide groove, the middle of the positioning shaft is sleeved with a roller lining in a sliding mode, the upper end of the positioning shaft is sleeved with the pressing block in a sliding mode, and the pressing block presses the top of the roller lining. The structure is simple andcompact, assembly and disassembly are convenient, installation requirements of different specifications of roller linings can be met, and universality is high. The roller lining can be pressed in place only by pressing down the pressing block, operation and use are quite convenient, time and labor are saved, and the working efficiency is high. The roller lining is free of shaking and shifting in the pressing process, it is ensured that positioning of the roller lining is accurate without error in the pressing process, and therefore the installation precision and position precision of the roller lining are ensured.

The invention discloses a gallium nitride single crystal substrate manufacturing method based on magnetron sputtering aluminum nitride, which comprises magnesium aluminum scandium tetraoxide (ScAlMgO4), and is characterized by comprising the following steps: S1, selecting the magnesium aluminum scandium tetraoxide (ScAlMgO4) as a substrate; S2, forming an aluminum nitride (AlN) thin film layer on the magnesium aluminum scandium tetraoxide (ScAlMgO4) substrate by adopting a magnetron sputtering method; S3, epitaxially growing a gallium nitride (GaN) single crystal layer on the aluminum nitride (AlN) thin film layer formed in the step S2 through an HVPE vapor phase growth method in a high-temperature environment; and S4, removing the magnesium aluminum scandium tetraoxide (ScAlMgO4) substrate and the aluminum nitride (AlN) thin film layer on the gallium nitride (GaN) single crystal layer to obtain the gallium nitride (GaN) single crystal substrate. The magnetron sputtering method and the HVPE vapor phase growth method are used for secondary growth, the situation that the magnesium aluminum scandium tetraoxide substrate is damaged when the GaN crystal grows is effectively avoided, and manufacturing of the high-quality GaN crystal substrate free of dislocation and crystal defects is achieved.

The invention discloses a high-insulativity LED tube lamp structure which comprises a lamp plate, a lamp plate frame and a power source. A rectifier IC in the power source is positioned at one end of the lamp plate, a constant-current circuit in the power source is positioned at the other end of the lamp plate, lamp beads are positioned between the rectifier IC and the constant-current circuit, the rectifier IC and the lamp beads are welded on the lamp plate and distributed along the length direction of the lamp plate frame, a non-welding face of the lamp plate and a plane of the lamp plate frame are in heat-conducting connection, an alternating-current first welding wire disc is arranged between an alternating-current input end of the rectifier IC and a first lamp holder close to the alternating-current input end, the alternating-current first welding wire disc is electrically connected with a wiring end of the first lamp holder, another alternating-current input end of the rectifier IC routes onto an alternating-current second welding wire disc, close to a second lamp holder, at the other end of the lamp plate, the alternating-current second welding wire disc is electrically connected with a wiring end of the second lamp holder, a positive output end of the rectifier IC is electrically connected with one end of the lamp plate LED lamp bead, the other end of each lamp plate LED lamp bead is electrically connected with a positive input end of the constant-current circuit, and a negative output end of the constant-current circuit is electrically connected with a negative output end of the rectifier IC. The high-insulativity LED tube lamp structure is high in structuredness and reliability.

The invention discloses a manufacturing method of a gallium nitride single crystal substrate based on plasma CVD (chemical vapor deposition). The substrate comprises scandium aluminum magnesium tetraoxide (ScAlMgO4). The method comprises the following steps of: S1, selecting the scandium aluminum magnesium tetraoxide (ScAlMgO4) as a substrate base; S2, forming a silicon dioxide (SiO2) film layer on the scandium aluminum magnesium tetraoxide (ScAlMgO4) substrate base by adopting either a plasma CVD (Chemical Vapor Deposition) method or a thermal CVD method; S3, epitaxially growing a gallium nitride (GaN) single crystal layer on the silicon dioxide (SiO2) film layer formed in the step S2 through an HVPE method at a high temperature; and S4, removing the scandium aluminum magnesium tetraoxide (ScAlMgO4) substrate base and the silicon dioxide (SiO2) film layer on the gallium nitride (GaN) single crystal layer. According to the method, secondary growth is carried out by using a plasma CVD or thermal CVD method and an HVPE method, so that the damage to the scandium aluminum magnesium tetraoxide substrate during the growth of the GaN crystal is effectively avoided, and the manufacturing of the high-quality GaN crystal substrate without dislocation and crystal defects is realized.

The invention discloses a high-power LED lamp structure with good manufacturability. The high-power LED lamp structure with good manufacturability comprises a lamp panel, a lamp panel frame and a power source, wherein a rectification IC in the power source is arranged at one end of the lamp panel, a constant current circuit in the power source is arranged at the other end of the lamp panel, and lamp beads are arranged between the rectification IC and the constant current circuit; the rectification IC and the lamp beads are welded on the lamp panel, and are distributed in the length direction of the lamp panel frame; the non-welding surface of the lamp panel and the plane surface of the lamp panel frame are in heat conduction connection; a first alternating-current welding wire coil is arranged at one alternating-current input end of the rectification IC and an adjacent first lamp holder, and is electrically connected with the wiring end of the first lamp holder; a wire penetrates through the lamp panel, and extends from the other alternating-current input end of the rectification IC to a second alternating-current welding wire coil arranged on the portion, close to a second lamp holder, of the other end of the lamp panel, and the second alternating-current welding wire coil is electrically connected with the wiring end of the second lamp holder; the positive output end of the rectification IC is electrically connected with one end of each LED lamp bead of the lamp panel, the other end of each LED lamp bead of the lamp panel is electrically connected with the positive input end of the constant current circuit, and the negative output end of the constant current circuit is electrically connected with the negative output end of the rectification IC. The high-power LED lamp structure is good in structural performance and high in reliability.