Manufacturing method of gallium nitride single crystal substrate based on plasma CVD
A plasma, gallium nitride single technology, applied in chemical instruments and methods, semiconductor/solid state device manufacturing, single crystal growth, etc., can solve problems such as damage to magnesium aluminum scandium tetroxide substrates
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[0022] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0023] The invention provides a technical solution: a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD, including magnesium aluminum scandium tetraoxide (ScAlMgO 4 ), including the following steps:
[0024] S1, select aluminum scandium magnesium oxide (ScAlMgO 4 ) as the substrate substrate;
[0025] S2, using a method in the plasma CVD or thermal CVD method, in the magnesium aluminum scandium tetroxide (ScAlMgO 4 ) on the substrate t...
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