Manufacturing method of gallium nitride single crystal substrate based on plasma CVD

A plasma, gallium nitride single technology, applied in chemical instruments and methods, semiconductor/solid state device manufacturing, single crystal growth, etc., can solve problems such as damage to magnesium aluminum scandium tetroxide substrates

Pending Publication Date: 2021-07-23
WUXI WUYUE SEMICON CO LTD
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  • Abstract
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Problems solved by technology

[0005] Aiming at the deficiencies in the prior art, the present invention provides a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD, which solves the problem that gallium nitride (GaN) crystal growth can damage aluminum scandium magnesium tetroxide (ScAlMgO 4 ) substrate problem

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Embodiment Construction

[0022] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] The invention provides a technical solution: a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD, including magnesium aluminum scandium tetraoxide (ScAlMgO 4 ), including the following steps:

[0024] S1, select aluminum scandium magnesium oxide (ScAlMgO 4 ) as the substrate substrate;

[0025] S2, using a method in the plasma CVD or thermal CVD method, in the magnesium aluminum scandium tetroxide (ScAlMgO 4 ) on the substrate t...

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Abstract

The invention discloses a manufacturing method of a gallium nitride single crystal substrate based on plasma CVD (chemical vapor deposition). The substrate comprises scandium aluminum magnesium tetraoxide (ScAlMgO4). The method comprises the following steps of: S1, selecting the scandium aluminum magnesium tetraoxide (ScAlMgO4) as a substrate base; S2, forming a silicon dioxide (SiO2) film layer on the scandium aluminum magnesium tetraoxide (ScAlMgO4) substrate base by adopting either a plasma CVD (Chemical Vapor Deposition) method or a thermal CVD method; S3, epitaxially growing a gallium nitride (GaN) single crystal layer on the silicon dioxide (SiO2) film layer formed in the step S2 through an HVPE method at a high temperature; and S4, removing the scandium aluminum magnesium tetraoxide (ScAlMgO4) substrate base and the silicon dioxide (SiO2) film layer on the gallium nitride (GaN) single crystal layer. According to the method, secondary growth is carried out by using a plasma CVD or thermal CVD method and an HVPE method, so that the damage to the scandium aluminum magnesium tetraoxide substrate during the growth of the GaN crystal is effectively avoided, and the manufacturing of the high-quality GaN crystal substrate without dislocation and crystal defects is realized.

Description

technical field [0001] The invention relates to the technical field related to the preparation of gallium nitride materials, in particular to a method for manufacturing a gallium nitride single crystal substrate based on plasma CVD. Background technique [0002] GaN is a typical representative of the third-generation wide-bandgap semiconductors. It has been widely used in semiconductor lighting, microwave power devices, and power electronic devices, showing great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material. Such homoepitaxial (that is, the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film and reduce the dislocation density. , Improve the working life of the device, improve the luminous efficiency, and increase the working current density of the device. [0003] However, gallium nitride single crystal growth is difficult and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C30B29/40C30B25/18
CPCH01L21/0242H01L21/02483H01L21/0254H01L21/0262H01L21/02664H01L21/02013C30B29/406C30B25/183
Inventor 山本晓张海涛刘良宏许彬庞博
Owner WUXI WUYUE SEMICON CO LTD
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