Gallium nitride single crystal substrate manufacturing method based on magnetron sputtering aluminum nitride

A magnetron sputtering and gallium nitride monolithic technology, which is applied in chemical instruments and methods, sputtering coating, single crystal growth, etc., can solve the problem of damage to magnesium aluminum scandium tetraoxide substrate and achieve crystal defect-free Effect

Inactive Publication Date: 2021-06-29
WUXI WUYUE SEMICON CO LTD
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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a method for manufacturing gallium nitride single crystal substrates based on magnetron sputtering aluminum nitride, which solves the problem that gallium nitride (GaN) crystal growth will damage magnesium aluminum scandium ( ScAlMgO 4 ) substrate problem

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Embodiment Construction

[0022] Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] The invention provides a technical solution, a method for manufacturing a gallium nitride single crystal substrate based on magnetron sputtering aluminum nitride, including aluminum scandium magnesium tetraoxide (ScAlMgO 4 ), including the following steps:

[0024] S1, select aluminum scandium magnesium oxide (ScAlMgO 4 ) as the substrate substrate;

[0025] S2, using the magnetron sputtering method in the magnesium aluminum scandium tetroxide (ScAlMgO 4 ) on the substrate to form an aluminum nitride (AlN) thin film layer, and through a magnetron sputtering coating device on magnesium aluminum scandium tetraoxide (ScAlMgO 4 ) forming an aluminum nitride (AlN) thin film layer on the substrate substrate;

[0026] S3. On the aluminum nitride (AlN) thin ...

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Abstract

The invention discloses a gallium nitride single crystal substrate manufacturing method based on magnetron sputtering aluminum nitride, which comprises magnesium aluminum scandium tetraoxide (ScAlMgO4), and is characterized by comprising the following steps: S1, selecting the magnesium aluminum scandium tetraoxide (ScAlMgO4) as a substrate; S2, forming an aluminum nitride (AlN) thin film layer on the magnesium aluminum scandium tetraoxide (ScAlMgO4) substrate by adopting a magnetron sputtering method; S3, epitaxially growing a gallium nitride (GaN) single crystal layer on the aluminum nitride (AlN) thin film layer formed in the step S2 through an HVPE vapor phase growth method in a high-temperature environment; and S4, removing the magnesium aluminum scandium tetraoxide (ScAlMgO4) substrate and the aluminum nitride (AlN) thin film layer on the gallium nitride (GaN) single crystal layer to obtain the gallium nitride (GaN) single crystal substrate. The magnetron sputtering method and the HVPE vapor phase growth method are used for secondary growth, the situation that the magnesium aluminum scandium tetraoxide substrate is damaged when the GaN crystal grows is effectively avoided, and manufacturing of the high-quality GaN crystal substrate free of dislocation and crystal defects is achieved.

Description

technical field [0001] The invention relates to the technical field related to the preparation of gallium nitride materials, in particular to a method for manufacturing a gallium nitride single crystal substrate based on magnetron sputtering aluminum nitride. Background technique [0002] GaN is a typical representative of the third-generation wide-bandgap semiconductors. It has been widely used in semiconductor lighting, microwave power devices, and power electronic devices, showing great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material. Such homoepitaxial (that is, the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film and reduce the dislocation density. , Improve the working life of the device, improve the luminous efficiency, and increase the working current density of the device. [0003] However, gallium nitride single crys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C30B23/02C30B29/40
CPCC23C14/35C23C14/0617C30B29/406C30B23/002C30B23/025
Inventor 山本晓张海涛刘良宏许彬庞博
Owner WUXI WUYUE SEMICON CO LTD
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