Gallium nitride single crystal substrate manufacturing method based on magnetron sputtering aluminum nitride
A magnetron sputtering and gallium nitride monolithic technology, which is applied in chemical instruments and methods, sputtering coating, single crystal growth, etc., can solve the problem of damage to magnesium aluminum scandium tetraoxide substrate and achieve crystal defect-free Effect
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[0022] Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0023] The invention provides a technical solution, a method for manufacturing a gallium nitride single crystal substrate based on magnetron sputtering aluminum nitride, including aluminum scandium magnesium tetraoxide (ScAlMgO 4 ), including the following steps:
[0024] S1, select aluminum scandium magnesium oxide (ScAlMgO 4 ) as the substrate substrate;
[0025] S2, using the magnetron sputtering method in the magnesium aluminum scandium tetroxide (ScAlMgO 4 ) on the substrate to form an aluminum nitride (AlN) thin film layer, and through a magnetron sputtering coating device on magnesium aluminum scandium tetraoxide (ScAlMgO 4 ) forming an aluminum nitride (AlN) thin film layer on the substrate substrate;
[0026] S3. On the aluminum nitride (AlN) thin ...
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