Large-size single crystal segment-taking ending structure and control method thereof

A control method and large-scale technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of low production efficiency in finishing control, and achieve the effect of universal controllability and high universality

Pending Publication Date: 2021-02-02
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem to be solved by the present invention is to provide a large-size single crystal section finishing structure and its control method, especially suitable for the finishing of single crystal crystals with a diameter range of 240-310mm, and the crystal can be completed within 1-1.5h The finishing work of the segment is obtained, and the ending shape of a ending but not pointed structure is obtained, which solves the technical problem of low production efficiency of the ending control in the prior art

Method used

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  • Large-size single crystal segment-taking ending structure and control method thereof
  • Large-size single crystal segment-taking ending structure and control method thereof
  • Large-size single crystal segment-taking ending structure and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The single crystal diameter is 240m, and the Czochralski single crystal furnace is Jingsheng 105s.

[0041] S1: When the equal-diameter section 11 is completed, the power of the main heater is 65kW, the crystal pulling speed is 97mm / hr, the rotation speed of the crystal 1 is 10r / min, and the rotation speed of the crucible 4 is 10r / min.

[0042] At the beginning of finishing, keep the crystal rotation and crucible rotation unchanged, manually click the start finishing button, and keep the diameter control module running continuously and stop the crucible 4 from rising. 70kW after a 5kW increase and stay at 70kW until the end of the tail. At the same time, manually set the initial pulling speed of the crystal 1 in the upper section 121 to 60mm / hr and slowly increase it. After the finishing lasts for 30 minutes, the pulling speed of the crystal 1 rises to 61mm / hr, and the upper section 121 is finished. At this time, the ending shape of the crystal 1 is a truncated conical...

Embodiment 2

[0047] The single crystal diameter is 280m, and the Czochralski single crystal furnace is Jingsheng 105s.

[0048] S1: When the equal-diameter section 11 is completed, the power of the main heater is 63.8kW, the crystal pulling speed is 95mm / hr, the rotation speed of the crystal 1 is 10r / min, and the rotation speed of the crucible 4 is 10r / min.

[0049] When starting to finish, keep the crystal rotation and crucible rotation unchanged, manually click the start finishing button, and keep the diameter control module running continuously and stop the crucible 4 from rising. At this time, on the basis of the main heater power 63.8kW at the end of the equal diameter A quick 7.2kW boost to 71kW and a constant 71kW until the finish. At the same time, manually set the initial pulling speed of the crystal 1 in the upper section 121 to 63mm / hr and slowly increase it, and after finishing for 35 minutes, the pulling speed of the crystal 1 rises to 64mm / hr, and the upper section 121 is fin...

Embodiment 3

[0054] The single crystal diameter is 310m, and the Czochralski single crystal furnace is Jingsheng 105s.

[0055] S1: When the equal-diameter section 11 is completed, the power of the main heater is 61kW, the crystal pulling speed is 90mm / hr, the rotation speed of the crystal 1 is 10r / min, and the rotation speed of the crucible 4 is 10r / min.

[0056]When starting to finish, keep the crystal rotation and the crucible rotation unchanged, manually click the start finishing button, and keep the diameter control module running continuously and stop the crucible 4 from rising. At this time, based on the main heater power 61kW at the end of the isometric A 12kW boost to 73kW and a constant 73kW until the tail end. At the same time, manually set the initial pulling speed of the crystal 1 in the upper section 121 to 65mm / hr and slowly increase it, and after finishing for 45 minutes, the pulling speed of the crystal 1 rises to 69mm / hr, and the upper section 121 is finished. At this ti...

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Abstract

The invention provides a large-size single crystal segment-taking ending structure which comprises an upper segment part and a lower segment part integrally connected with the upper segment part. Theupper segment part is higher than the lower segment part, and the maximum diameter of the upper segment part is the same as the diameter of a crystal equal-diameter segment. The maximum diameter of the lower segment part is larger than the minimum diameter of the upper segment part and smaller than the maximum diameter of the upper segment part. The maximum height of the lower segment part is located between the minimum heights of the two sides, and a variable curved surface is arranged between the minimum height and the maximum height. The segment-taking ending structure provided by the invention is a novel ending structure, is particularly suitable for ending large-size single crystal crystals, solves the technical problem of low ending control production efficiency in the prior art, andis high in universality and controllable. The invention further provides a control method of the large-size single crystal segment-taking ending structure, segment-taking ending can be conducted on asingle crystal with the diameter of 240-310 mm within 1-1.5 h, an ending structure which is ended but not sharpened is obtained, the working hours are shortened, dislocation is eliminated, the quality of the single crystal is guaranteed, the production efficiency is improved, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of accessories used in Czochralski silicon single crystal furnaces, and in particular relates to a large-size single crystal section finishing structure and a control method thereof. Background technique [0002] Chinese patent CN106637402B publicly proposes a single crystal silicon flat-finishing method and preparation method. The flat-finishing method includes: closing the automatic temperature control system, stopping the rising of the crucible; manually raising the temperature by 10-20°C, and reducing the crystal pulling speed to 0.1-0.4mm / min. Keep the crystal growing for 20-30 minutes, and the end of the crystal in contact with the solid-liquid interface grows from a concave surface to a flat surface; turn off the automatic control system of the crystal pulling speed, manually reduce the pulling speed to less than 0.1mm / min, and keep the crystal growing for 20-20 minutes. After 30 minutes, the end of t...

Claims

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Application Information

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IPC IPC(8): C30B15/00C30B15/20C30B29/06
CPCC30B15/00C30B15/20C30B29/06Y02P40/57
Inventor 郭谦张文霞高润飞王林徐强霍志强韩凯武志军郭志荣张石晶
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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