Inductance coupling coil and inductance coupling plasma apparatus using the same

Abstract

The invention discloses an inductance coupling coil and an inductance coupling plasma device which uses the coil, comprising an internal winding and an external winding; the relative position between the internal winding and the external winding can be adjusted; the internal winging and the external winding are respectively fixed on an internal winding bracket and an external winding bracket; theinternal winding bracket and the external winding bracket are arranged on the upper part of a reaction chamber; the external winding bracket is fixed with a rack; the wall of the reaction chamber is provided with a gear which is meshed with the rack; in order to cause the relative position between the internal winding and the external winding to be adjustable, the relative position between the internal winding and the external winding can be adjusted so as to adjust the density of the plasma in the reaction chamber and lead the plasma to be uniformly distributed above the wafer of the reaction chamber, thus effectively adjusting the uniformity of the etching rate and improving the quality of the etching wafer. The inductance coupling coil and the inductance coupling plasma device are mainly applied to semiconductor wafer processing equipment and applicable for other similar equipment.

Description

technical field [0001] The invention relates to an accessory for semiconductor wafer processing equipment, in particular to an inductively coupled coil and an inductively coupled plasma device using the coil. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Plasma devices are widely used in manufacturing processes for manufacturing IC (Integrated Circuit) or MEMS (Micro Electro Mechanical System) devices. Among them, ICP (inductively coupled plasma device) is widely used in etching and other processes. Under low pressure, the reactive gas is excited by radio frequency power to generate ionization to form a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molec...

AI Technical Summary

Problems solved by technology

Although the current of the inner winding 2 and the outer winding 1 can be adjusted separately, since the relative position of the inner winding 2 and the outer winding 1 is fixed, it cannot be adjusted, so that the process adjustable window is small, and the etching rate cannot be effectively adjusted. Uniformity

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