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Iii-nitride semiconductor light emitting device

A technology of nitride semiconductors and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as imbalance, unstable leakage and current density

Inactive Publication Date: 2012-04-25
EPIVALLEY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] In addition, in the case where the first n-side electrode 800a and the second n-side electrode 800b are formed in the light emitting device, the instability of their electrical contact may cause leakage and imbalance of current density.

Method used

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  • Iii-nitride semiconductor light emitting device

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Experimental program
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Embodiment Construction

[0047] Hereinafter, the present invention will be described in detail with reference to the drawings.

[0048] image 3 A view for describing an example of the group III nitride semiconductor light-emitting device of the present invention. The III-nitride semiconductor light-emitting device includes a substrate 10 having a trench 91 formed therein, a buffer layer 20 epitaxially grown on the substrate 10, an n-type nitride semiconductor layer 30 epitaxially grown on the buffer layer 20, and epitaxial growth On the n-type nitride semiconductor layer 30, the active layer 40 that generates light by the recombination of electrons and holes, the p-type nitride semiconductor layer 50 epitaxially grown on the active layer 40, and the p-type nitride semiconductor layer The p-side electrode 60 as a light-transmitting electrode on the layer 50, the p-side pad 70 formed on the p-side electrode 60, and the first n-side formed on the n-type nitride semiconductor layer 30 exposed through the op...

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PUM

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Abstract

The present disclosure relates to an III-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The III-nitride semiconductor light emitting device includes a substrate, a plurality of III-nitride semiconductor layers grown on the substrate, and composed of a first III-nitride semiconductor layer with first conductivity, a second III-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of III-nitride semiconductor layers.

Description

Technical field [0001] The present invention relates to a III-nitride semiconductor light-emitting device, in particular, to a vertical III-nitride semiconductor light-emitting device having holes passing through the device, and more specifically, to a vertical III-nitride semiconductor light-emitting device Electrode structure. [0002] The group III nitride semiconductor light-emitting device refers to (x) Ga (y) In (1-x-y) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) composed of compound semiconductor layers such as light-emitting diodes and other light-emitting devices, the III-nitride semiconductor light-emitting devices may further include other groups Elemental materials (such as SiC, SiN, SiCN, and CN) and semiconductor layers made of these materials. Background technique [0003] figure 1 It is a view describing an example of a conventional group III nitride semiconductor light emitting device. The III-nitride semiconductor light-emitting device includes a substrate 100, a buffer layer 200...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/02
Inventor 金昌台郑贤敏李泰熙崔炳均金贤锡南起炼
Owner EPIVALLEY