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Polishing monitoring method and polishing apparatus

一种设备、抛光垫的技术，应用在磨削/抛光设备、金属加工设备、表面抛光的机床等方向，能够解决不能频繁涡电流传感器校正、抛光设备可利用率下降等问题，达到精确膜厚度监视的效果

Active Publication Date: 2009-04-22
EBARA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to correct the eddy current sensor, the polishing process must be stopped, and as a result, the availability of polishing equipment decreases
For this reason, in semiconductor mass production facilities, calibration of eddy current sensors cannot be performed frequently

Method used

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  • Polishing monitoring method and polishing apparatus
  • Polishing monitoring method and polishing apparatus
  • Polishing monitoring method and polishing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Embodiments of the present invention are described below with reference to the drawings.

[0052] Figure 7 is a schematic diagram of the overall structure of a polishing (grinding) device according to an embodiment of the present invention. as shown in Figure 7 , the polishing apparatus has a polishing table 12, which holds the polishing pad 10 on its upper surface, and a top ring 14, which is configured to hold a wafer (substrate) as a workpiece to be polished, and push the wafer against the surface of the polishing pad 10. on the upper surface, and a conditioner 20 configured to condition (or condition) the upper surface of the polishing pad 10 when polishing of the wafer is not being performed. The upper surface of polishing pad 10 provides a polishing surface for sliding contact with the wafer.

[0053] The polishing table 12 is connected to a motor (not shown) disposed below it, and is rotatable around its own axis as indicated by an arrow. A polishing liquid...

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Abstract

The invention relates to a polishing monitoring method and a polishing apparatus. The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of theconductive film during polishing by monitoring a change in the actual measurement signal value.

Description

technical field [0001] The present invention relates to a method of monitoring a change in thickness of a conductive film formed on a surface of a substrate during polishing (grinding), and to a polishing apparatus. Background technique [0002] Polishing equipment is widely used to polish conductive films formed on wafer surfaces, such as isolation films and interconnect metal films. Polishing endpoint detection and polishing condition changes during polishing are determined based on the thickness of the conductive film. Therefore, polishing equipment generally includes a film thickness detector for detecting the thickness of the conductive film during polishing. A typical example of the film thickness detector is an eddy current sensor. The eddy current sensor is configured to supply high-frequency alternating current to the coil to induce eddy current in the conductive film, thereby detecting the thickness of the conductive film from a change in impedance caused by a ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B7/06B24B29/00B24B49/04H01L21/00B24B37/013H01L21/304
CPCB24B37/042G01B7/105B24B49/105H01L21/302H01L21/304
Inventor 小林洋一高桥太郎广尾康正小川彰彦大田真朗
Owner EBARA CORP
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