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Semiconductor device having vertical and horizontal type gates and method for fabricating the same

A semiconductor, vertical technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc.

Inactive Publication Date: 2011-05-04
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, trench gate MOSFETs can only be used as a single device and cannot be integrated with horizontal devices

Method used

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  • Semiconductor device having vertical and horizontal type gates and method for fabricating the same
  • Semiconductor device having vertical and horizontal type gates and method for fabricating the same
  • Semiconductor device having vertical and horizontal type gates and method for fabricating the same

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Embodiment Construction

[0016] Reference will now be made in detail to embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts

[0017] example figure 2 is a cross-sectional view showing the structure of a semiconductor device having vertical and horizontal gates.

[0018] example figure 2 As shown, low-density N-type epitaxial layer 52 is formed on and / or over high-density substrate 50 having a first conductivity type, such as N-type. A low-density base region (base region, base region) 54 having a second conductivity type such as P-type is formed in the epitaxial layer 52 . The plurality of base regions 54 are formed in predetermined regions of the epitaxial layer 52 in isolation from each other. A high-density N-type source region 56 is formed in the low-density base region 54 . in with A high-density N-type drain region 57 is formed i...

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Abstract

A semiconductor device having both vertical and horizontal type gates and a method for fabricating the same for obtaining high integration of the semiconductor device and integration with other devices while also maximizing the breakdown voltage and operational speed and preventing damage to the semiconductor device.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0112124 (filed on November 5, 2007) based on 35 U.S.C119, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly, to a metal oxide semiconductor field effect transistor (MOSFET) having vertical and horizontal gates and a manufacturing method thereof. Background technique [0003] Power MOSFETs have simpler gate drive circuits than bipolar transistors due to their high input impedance. Also, being a unipolar device, a power MOSFET has the advantage of not causing a time delay caused by the accumulation or recombination of some minority carriers when the device is turned off. Therefore, applications of power MOSFETs have increased in the fields of switching mode power supplies, lamp ballasts, and motor drive circuits. [0004] A double-diffused M...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L27/06H01L29/78H01L29/06H01L21/8234H01L21/336
CPCH01L29/42376H01L29/66712H01L29/7803H01L29/7805H01L29/7808H01L29/7809H01L29/7813H01L29/7817H01L29/7831
Inventor 方诚晚
Owner DONGBU HITEK CO LTD