Electric current control device applying to transistor

Abstract

The invention provides a current control device which is applied to a transistor; the transistor has a control endpoint, a first endpoint and a second endpoint, moreover, the current control device comprises a current control module, a first current mirror module, a second current mirror module, a current subtracter, and a current regulating module. The current control device can be applied to a bipolar junction transistor, thereby avoiding the occurrence of a temperature measurement error when a dual current mode temperature measurement method is used for measuring the temperature of the bipolar junction transistor.

Description

technical field [0001] The present invention relates to a current control device, in particular to a current control device that can be applied to a bipolar junction transistor, so that the bipolar junction transistor can be measured by using a dual current mode temperature measurement method The temperature can avoid the generation of temperature measurement error. Background technique [0002] Please refer to figure 1 , figure 1 Shown is a simplified schematic diagram of a bipolar junction transistor (BJT) 100 according to known techniques. Such as figure 1 As shown, the bipolar junction transistor 100 has a base, an emitter and a collector, and its base current Ib, emitter current Ie and collector current Ic have the following relationship: [0003] Ib+Ie+Ic=0 [0004] Ie=-(β+1)Ic / β [0005] In addition, those skilled in the art should be able to understand that the temperature of the bipolar junction transistor 100 can be measured by a dual current mode (dual curre...

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Problems solved by technology

[0005] In addition, those skilled in the art should be able to understand that the temperature of the bipolar junction transistor 100 can be measured by a dual current mode (dual current mode) temperature measurement method to measure two different emitter currents Ie1 and Ie2 of the bipolar junction transistor 100 And further calculation to obtain a temperature measurement result, and because the temperature of the bipolar junction transistor 100 is directly related to the ratio of the collector current Ic1 and Ic2 in fact, so in the advanced technology, when the bipolar junction transistor 100 When the β value becomes smaller and changes with the current size, the existing technology cannot obtain the true ratio between the collector current Ic1 and Ic2, thus causing serious temperature measurement errors

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