Supercharge Your Innovation With Domain-Expert AI Agents!

Alignment mark and defect detection method

A technology for alignment marks and defect detection, which is applied in the field of defect detection and can solve problems such as numerical offsets

Active Publication Date: 2010-06-02
UNITED MICROELECTRONICS CORP
View PDF4 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the main purpose of the present invention is to provide an alignment mark and a method for detecting defects using the alignment mark, so as to improve the current situation where numerical deviations are easily generated during defect detection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Alignment mark and defect detection method
  • Alignment mark and defect detection method
  • Alignment mark and defect detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] Please refer to figure 1 , figure 1 It is a schematic cross-sectional view of an alignment mark 40 in a preferred embodiment of the present invention. Such as figure 1 As shown, first a semiconductor substrate 42, such as a silicon wafer, is provided. An ion implantation process is then performed to implant N-type dopants into the semiconductor substrate 42 to form an N-type well (N-well) 44 . Then another ion implantation process is performed to implant P-type dopants into the formed N-type well 44 to form a shallower P+ doped region 46 in the N-type well 44 .

[0021] Then a dielectric layer 48 is formed on the semiconductor substrate 42 and covers the N − -type well 44 and the P+ doped region 46 . In this embodiment, the dielectric layer 48 may be made of dielectric materials such as oxides, carbides or nitrides, or low dielectric constant materials, or any combination thereof. Then form a patterned photoresist layer (not shown) on the dielectric layer 48, and u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an alignment mark and a defect detection method. The defect detection method comprises the following steps of: utilizing a first defect detection system to carry out a first defect detection step on a wafer, then carrying out a process on the wafer and utilizing a second defect detection system to carry out a second defect detection step on the wafer, wherein at least one pair of alignment marks are arranged on the wafer, the first detection step additionally comprises the step of aligning the alignment marks, and the alignment marks are reference points of the first defect detection step; the second defect detection step additionally comprises the step of aligning the alignment marks, and the alignment marks are reference points of the second defect detection step.

Description

technical field [0001] The invention relates to an alignment mark, in particular to an alignment mark formed by an ion implantation process and a defect detection method using the alignment mark. Background technique [0002] There are many processing steps in the manufacture of semiconductor integrated circuits, such as photolithography, etching, and deposition. During these steps, material is overlapped or removed from existing layers in order to form the desired integrated circuit device. Proper alignment of layers in various processing procedures is therefore critical. In the current semiconductor process, the marking method is mostly used to measure the alignment accuracy between different material layers. The marking method uses a specific position on a back layer to compare with another specific position on a front layer, for example, using An alignment pattern on the rear layer is superimposed on another alignment pattern on the front layer, and then the two alignm...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66H01L23/544
Inventor 周玲君陈铭聪刘喜华雷舜诚曹博昭
Owner UNITED MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com