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Ultra-fine grain metal membrane or ultra-fine grain alloy membrane and preparation method thereof

A technology of metal thin film and alloy thin film, which is applied in the direction of metal material coating process, ion implantation plating, coating, etc., can solve the problems of discontinuous film shape, large roughness, and large grain size of film materials, etc. Achieve the effects of simple and controllable preparation method, uniform distribution and low production cost

Inactive Publication Date: 2012-01-25
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is still impossible to prepare ultra-fine-grained and thick metal films, because metal films such as In, Sn, Zn, and Bi are severely matured during the deposition process, which easily leads to discontinuous film morphology. , large grain size and large roughness, in addition, as the film thickness increases, the grain size of the film material usually becomes larger

Method used

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  • Ultra-fine grain metal membrane or ultra-fine grain alloy membrane and preparation method thereof
  • Ultra-fine grain metal membrane or ultra-fine grain alloy membrane and preparation method thereof
  • Ultra-fine grain metal membrane or ultra-fine grain alloy membrane and preparation method thereof

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Effect test

Embodiment 1

[0039] The method for preparing the Sn thin film material according to Embodiment 1 of the present invention includes:

[0040] Step 1): Select a cover glass as the substrate, use a conventional semiconductor cleaning process to clean the substrate, use a dry gas to dry it after cleaning, dry it in a vacuum oven at a temperature of 120°C-200°C, and cool it to room temperature take out after

[0041] Step 2): using radio frequency magnetron sputtering to deposit a first layer of metal Sn thin film on the cover glass substrate 1 treated as above, deposition conditions: sputtering power 20W, Ar flow rate 2.0sccm, deposition pressure 0.5-0.6Pa , the deposition time is 100s, and the thickness of the metal Sn film is 5nm;

[0042] Step 3): After breaking the vacuum of the magnetron sputtering equipment, take out the cover glass, let the metal film contact the atmosphere for 5 seconds, then put it into the equipment, and vacuumize it. When the vacuum degree required for deposition i...

Embodiment 2

[0045] The method for preparing the Sn thin film material according to Embodiment 2 of the present invention includes:

[0046] Step 1): select a single-crystal Si wafer as a substrate, use a conventional semiconductor cleaning process to clean the substrate, take out after cleaning and blow dry with nitrogen, and then take out after drying and cooling in a vacuum oven;

[0047] Step 2): adopting AC magnetron sputtering to deposit the first layer of metal Sn film on the Si substrate treated as above, to obtain a metal Sn film with a thickness of 3 nm;

[0048] Step 3): After breaking the vacuum of the magnetron sputtering equipment, take out the Si sheet, make the metal film contact the atmosphere for 10 seconds, then put it into the equipment, and vacuumize it. When the vacuum degree required for deposition is reached, repeat Step 2) Deposition 7 times to obtain a Sn metal thin film with a thickness of 21 nm.

[0049] Figure 4a This is an electron scanning microscope surfa...

Embodiment 3

[0051] The method for preparing the Sn thin film material according to Embodiment 3 of the present invention includes:

[0052] Step 1): select a single-crystal Si wafer as a substrate, use a conventional semiconductor cleaning process to clean the substrate, take out after cleaning and blow dry with nitrogen, and then take out after drying and cooling in a vacuum oven;

[0053] Step 2): adopt AC magnetron sputtering to deposit the first layer of metal Sn film on the Si substrate treated as above, and obtain the thickness of the metal Sn film as 5nm;

[0054] Step 3): After breaking the vacuum of the magnetron sputtering equipment, take out the Si sheet, make the metal film contact the atmosphere for 10 seconds, then put it into the equipment, and vacuumize it. When the vacuum degree required for deposition is reached, repeat Step 2) Deposition 4 times to obtain a Sn metal thin film with a thickness of 20 nm.

[0055] Figure 4b It is a scanning electron microscope surface t...

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Abstract

The invention provides an ultra-fine grain metal membrane or an ultra-fine grain alloy membrane and a preparation method thereof. The method for preparing the ultra-fine grain metal membrane comprises the following steps: 1), selecting a substrate, and cleaning and drying the substrate; 2), adopting a physical vapor deposition process to grow a layer of membrane of metal In, Sn, Zn or Bi; 3), performing surface oxidation on the membrane of the step 2); and repeating the step 2) and the step 3) until the membrane reaches the required thickness. The grain size of the metal or alloy membrane obtained by adopting the method is between 5 and 50 nanometers; the method has the advantages of simple and controlled process, uniform sizes and shapes of products and low cost; and the ultra-fine grainmembrane can be obtained without needing to improve the conventional equipment.

Description

technical field [0001] The invention belongs to the field of thin film material preparation, in particular to an ultrafine-grained metal or alloy thin film material and a preparation method thereof. Background technique [0002] In the fields of optoelectronics and semiconductors, metal or alloy thin films have a wide range of application values, such as being used as electrode materials, for preparing grayscale masks, or preparing transparent conductive films after thermal oxidation of specific metal thin films. Since the grain size of such metal or alloy films directly affects its application, researchers have been working to reduce the grain size of the films, see S.Hishita et al., Thin solidfilms, 464, 146 (2004). However, it is still impossible to prepare ultra-fine-grained metal films with large thicknesses, because metal films such as In, Sn, Zn, and Bi are severely matured during the deposition process, which easily leads to discontinuous film morphology. , large gr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/14C23C14/58
Inventor 张建明郭传飞刘前
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA