Method for measuring intrinsic Q value of film bulk acoustic resonator
A thin-film bulk acoustic wave and resonator technology, applied in the field of radio frequency resonators, to achieve the effect of accurate intrinsic resonance frequency
Inactive Publication Date: 2012-05-09
ZHEJIANG UNIV
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[0005] The invention provides a method for measuring the intrinsic Q value of a thin film bulk acoustic resonator, which solves the problem that there is a large deviation between the Q value measured by the existing method and the intrinsic Q value
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[0024] Such as figure 1 and figure 2 As shown, the film bulk acoustic resonator (FBAR) and its parasitic circuits can be divided into three two-port networks based on the PMBVD model, namely the two-port network 201 , the two-port network 202 and the two-port network 203 . Two-port network 201 is composed of parasitic inductance 101 , parasitic capacitance 102 and parasitic resistance 103 , two-port network 203 is composed of parasitic inductance 104 , parasitic capacitance 105 and parasitic resistance 106 , and two-port network 202 includes resonant working area 107 .
[0025] The film bulk acoustic resonator is a sandwich structure composed of a piezoelectric film layer and upper and lower plates. The piezoelectric layer and electrode materials are ZnO and Al respectively. The area of the piezoelectric layer is 200um×200um, the thickness is 2um, and the aluminum electrode The area is 100um×100um. In this embodiment, the parasitic inductance is 1pH, the parasitic capacit...
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The invention discloses a method for measuring the intrinsic Q value of a film bulk acoustic resonator, which comprises the following steps: (1) based on a PMBVD model, splitting a whole circuit formed by the film bulk acoustic resonator and a parasitic circuit into three cascaded two-port networks; (2) reading the S parameters of the whole circuit at a plurality of working frequencies and converting into corresponding T parameters, utilizing a formula T2 = TT1-1T3-1 to calculate and obtain the S parameter S of a second two-port network at the corresponding working frequency, and determining the minimum values of S11 and S12 in S at all working frequencies and the corresponding working frequencies wS and wP; and (3) utilizing (1) to obtain the intrinsic Q value. Compared with other existing methods, the method for measuring the intrinsic Q value of the film bulk acoustic resonator can eliminate the affect of parasitic parameters introduced in the manufacturing process of FBAR, and obtain precise intrinsic Q value of the FBAR and accurate intrinsic resonant frequency.
Description
technical field [0001] The invention relates to the technical field of radio frequency resonators, in particular to a method for measuring the intrinsic Q value of a thin film bulk acoustic wave resonator. Background technique [0002] In the field of wireless communication, high communication frequency, high transmission rate, high-intensity multiplexing and high integration become the future development trend, which puts forward higher requirements for the radio frequency and filter characteristics of wireless transceivers. High-Q resonator technology that can be integrated into filters is under vigorous development. Film Bulk Acoustic Resonator (FBAR) has been widely used in the field of wireless communication due to its high operating frequency, high Q value, low temperature coefficient, high power carrying capacity, integration and small size. [0003] With the progress of integrated circuit manufacturing technology, the performance of FBAR has been greatly improved, t...
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IPC IPC(8): G01R27/26G01R23/02G01R27/28
Inventor 董树荣吴梦军张慧金程维维韩雁
Owner ZHEJIANG UNIV