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Method for realizing selectively growing Ge-containing material layer through low temperature

A material layer and selective technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as difficult exhaust gas treatment

Active Publication Date: 2012-03-28
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to at least solve one of the above-mentioned technical defects, especially when epitaxy does not need to feed HCl gas, thereby avoiding problems such as difficulties in tail gas treatment caused by feeding HCl gas

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  • Method for realizing selectively growing Ge-containing material layer through low temperature
  • Method for realizing selectively growing Ge-containing material layer through low temperature
  • Method for realizing selectively growing Ge-containing material layer through low temperature

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Embodiment Construction

[0014] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0015] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicat...

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Abstract

The invention provides a method for realizing selectivity through low temperature, which comprises the following steps: providing a substrate; forming a dielectric layer on the substrate; photoetching and etching the dielectric layer to form one or more epitaxial regions for growing Ge-containing material layers in the dielectric layer; and forming the Ge-containing material layers in the epitaxial regions under a low-temperature condition that chemical vapor deposition (CVD) is adopted and HCl is not introduced. In the embodiment of the invention, Ge-containing material layers are extended by a low temperature mode, thus at lower temperatures, the probability of nucleation of the epitaxial material on the dielectric layer is greatly reduced, and good selectivity can be realized without introducing the HCl gas, thereby avoiding the problems of pollution and the like caused by introduction of the HCl gas.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing and design, in particular to a method for selectively growing a Ge-containing material layer through low temperature. Background technique [0002] In the semiconductor industry, silicon (Si) has been developing as the dominant semiconductor material for several decades, during which time it has shown good performance. However, with the continuous reduction of device feature size, the size of a single transistor gradually reaches the dual limits of physics and technology, so the mobility of CMOS devices using silicon as the channel material becomes lower and lower, which cannot meet the continuous improvement of device performance. Lifting requirements. In order to solve this problem, the existing technology introduces strain technology to improve the mobility of silicon materials, or directly adopts other materials with higher mobility to replace Si as the channel material of...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205
Inventor 王敬许军郭磊
Owner TSINGHUA UNIV
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