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Polycrystal ingot furnace with heat exchanger, deflector and carrier gas heating device all installed internally

A technology of a diversion device and a heating device, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve problems such as affecting the conversion efficiency of solar cells, and achieve the advantages of transportation, uniform radial resistivity, and uniformity. The effect of distribution

Inactive Publication Date: 2017-12-01
陈鸽
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon carbide impurities are electroactive, affecting conversion efficiency of solar cells

Method used

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  • Polycrystal ingot furnace with heat exchanger, deflector and carrier gas heating device all installed internally
  • Polycrystal ingot furnace with heat exchanger, deflector and carrier gas heating device all installed internally
  • Polycrystal ingot furnace with heat exchanger, deflector and carrier gas heating device all installed internally

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0053] A polycrystalline ingot furnace with built-in heat exchanger and carrier gas heating device of the present invention, such as figure 2 As shown, the polycrystalline ingot furnace includes an ingot furnace body 10 , a heating device 60 and a heat exchanger 70 . The heat exchanger 70 and the heating device 60 are arranged inside the ingot furnace body 10 for heating the carrier gas. The heat exchanger 70 is arranged outside the heat insulation cage 14 built in the ingot furnace body 10, and the heating device 60 is arranged inside the heat insulation cage 14, between the heater 15 built in the ingot furnace body 10 and the heat insulation cage 14 , wherein the heater 15 is arranged inside the heat insulation cage 14 . The output end of the heat exchanger 70 communicates with the input end of the heating device 60 , the input end of the heat exchanger 70 communicates with the gas delivery pipe 50 for transporting the carrier gas, and the output end of the heating device ...

Embodiment approach 2

[0059] The difference between Embodiment 2 and Embodiment 1 is only that: a flow guiding device 20 is set in the polycrystalline ingot furnace, such as Figure 5 , Image 6 As shown, the flow guiding device 20 is used to divide the carrier gas into multiple beams of outgoing carrier gas flows, and the outgoing carrier gas flows are blown obliquely to different regions of the surface of the liquid silicon, forming carrier gas stress distributed around the center of the liquid silicon, and the carrier gas stress drives the liquid silicon. The silicon flows and forms a rotating flow field for circumferential flow in the liquid silicon. The air guide device 20 is provided with an air inlet 213 through which the carrier gas flows. The heating device adopts a heating tube, and the output end of the heating tube is communicated with the air inlet 213 of the flow guiding device 20 through the connecting pipe 61, and the input end is connected with the second heat exchanger 72 (if a p...

Embodiment approach 3

[0068] The difference between Embodiment 3 and Embodiment 1 is only that: the polycrystalline ingot furnace has a built-in guide device 30, such as Figure 14 , Figure 15 As shown, the flow guiding device 30 is used to divide the carrier gas into multiple bundles of outgoing carrier gas flows, and the outgoing carrier gas flows are respectively obliquely blown to different regions of the surface of the liquid silicon to form carrier gas stress distributed circumferentially around the center of the liquid silicon, and the carrier gas The stress drives the liquid silicon to flow, and a rotating flow field for circumferential flow is formed in the liquid silicon. An air inlet 33 through which the carrier gas flows is provided on the outer surface of the flow guiding device 30 . The heating device adopts a heating tube, and the output end of the heating tube is communicated with the air inlet 33 of the flow guiding device 30 through the connecting pipe 61, and the input end is c...

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Abstract

The invention discloses a polycrystal ingot furnace with a heat exchanger, a deflector and a carrier gas heating device all installed internally. The polycrystal ingot furnace comprises the deflector, a heater and a heat-insulating cage all assembled in the ingot furnace, and further comprises the carrier gas heating device and the heat exchanger. The deflector is used for delivering carrier gas into the furnace; the heater is arranged in the heat-insulating cage; the deflector is arranged on a heat-insulating plate of the heat-insulating cage; the carrier gas heating device and the heat exchanger are also arranged in the ingot furnace; the heating device is disposed in the heat-insulating cage and the heat exchanger is arranged outside the heat-insulating cage; an input end of the heat exchanger is communicated with a carrier gas delivery pipe while an output end is communicated with an input end of the heating device; an output end of the heating device is communicated with an input end of the deflector. Cool carrier gas is heated through the heat exchanger and the heating device sequentially to form hot carrier gas with high temperature, and then the hot carrier gas blows silicone materials in a crucible through the deflector. Thus, the degree of supercooling of liquid-state silicon in a purging area is decreased, and growth of impurity nucleation and impurity nucleus, promoted by the carrier gas, in the liquid-state silicon is reduced and even eliminated.

Description

[0001] This application is a divisional application of a patent application with the application number 201610082941.3, the application date is 2016-02-03, and the name is a polycrystalline ingot furnace with a built-in heat exchanger and a carrier gas heating device. technical field [0002] The invention relates to a polycrystalline ingot casting furnace, in particular to a polycrystalline ingot casting furnace with a built-in heat exchanger and a carrier gas heating device, belonging to the field of crystal growth equipment. Background technique [0003] The polycrystalline ingot casting furnace 10 includes a furnace body 11 , a heat insulation cage 14 , a heater 15 , a heat exchange platform 16 , a drainage device 12 and an infrared detector 90 . The heater 15 includes a top heater and a side heater, and is arranged in the heat insulation cage 14; the heat exchange platform 16 is assembled in the lower furnace body through graphite columns and is located in the heat insul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 陈鸽其他发明人请求不公开姓名
Owner 陈鸽
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