Thin film transistor and manufacture method thereof
A technology of thin-film transistors and manufacturing methods, applied in transistors, semiconductor/solid-state device manufacturing, optics, etc., can solve problems such as cost increase, over-etched gate insulating layer, and process difficulties, so as to achieve good control, increase reliability, and improve components The effect of the characteristic
Active Publication Date: 2012-06-20
AU OPTRONICS CORP
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Problems solved by technology
However, the etching selectivity between molybdenum and oxide or nitride as the gate insulating layer is not high, so when patterning the molybdenum metal layer to form the source and drain, it is easy to cause molybdenum residue or over-etch the gate insulating layer And other issues
In addition, if copper is used as the material of the source and drain, since the copper process needs to be well controlled, it will lead to an increase in process difficulty and cost
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[0057] Figure 1A It is a schematic top view of an active device array substrate according to the first embodiment of the present invention. Figure 1B is along Figure 1A Schematic cross-sectional view of line segments I-I', II-II', III-III', IV-IV'. In this embodiment, only two pixel structures are shown for illustration, but it is not intended to limit the scope of the present invention.
[0058] Please also refer to Figure 1A and Figure 1B The active device array substrate includes a substrate 100 , a plurality of pixel structures 120 , a plurality of scan lines 130 and a plurality of data lines 140 . The substrate 100 is, for example, a rigid substrate, such as a glass substrate, or a flexible substrate, such as a plastic substrate. The pixel structures 120 , the scan lines 130 and the data lines 140 are all disposed on the substrate 100 , wherein the plurality of pixel structures 120 are electrically connected to the corresponding scan lines 130 and the data lines 14...
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The invention provides a thin film transistor and a manufacture method thereof. The manufacture method comprises the following steps of: forming a grid electrode on a base plate and a grid insulating layer for covering the grid electrode; forming a metal oxide semiconductor passage layer on the grid insulating layer; and forming a source electrode and a drain electrode on the grid insulating layer and the metal oxide semiconductor passage layer. A method for forming the source electrode and the drain electrode comprises the following steps of: sequentially forming a first conductor layer and a second conductor layer and then forming a patterned photoresist layer on the second conductor layer; carrying out wet etching by adopting the patterned photoresist layer as a mask film and adopting the first conductor layer as a terminate layer for patterning the second conductor layer; carrying out dry etching by adopting the patterned photoresist layer as the mask film for patterning the firstconductor layer, wherein partial area of the metal oxide semiconductor passage layer is exposed by the source electrode and the drain electrode; and carrying out surface treatment on the exposed metal oxide semiconductor passage layer by fluorine-contained gas. The invention can prevent the metal oxide semiconductor passage layer from generating the defect of structural damage in source electrodeand drain electrode etching to obtain favorable control.
Description
technical field [0001] The present invention relates to a thin film transistor and its manufacturing method, and in particular to a thin film transistor capable of improving channel layer reliability and its manufacturing method. Background technique [0002] With the advancement of display technology, people can make their lives more convenient with the assistance of displays. In order to achieve the characteristics of lightness and thinness of displays, flat panel displays (FPDs) have become the current mainstream. Among many flat panel displays, a liquid crystal display (LCD) has superior characteristics such as high space utilization efficiency, low power consumption, no radiation, and low electromagnetic interference. Therefore, the liquid crystal display is very popular among consumers. In particular, for thin film transistors that are widely used in displays, the structural design or material selection will directly affect the performance of the product. [0003] Gen...
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IPC IPC(8): G02F1/136H01L21/34H01L21/44H01L21/465H01L29/786
Inventor 李刘中陈佳榆
Owner AU OPTRONICS CORP