Semiconductor device and manufacturing method thereof

Abstract

The present invention provides a method for manufacturing surrounding gate transistors to obtain low-resistance structures of the source, drain, and gate, as well as the desired gate length, source, drain shape, and diameter of the columnar semiconductor . The manufacturing method of the semiconductor device comprises: a step of forming a columnar first conductivity type semiconductor layer; a step of forming a second conductivity type semiconductor layer under the columnar first conductivity type semiconductor layer; A step of forming a gate insulating film and a gate electrode; a step of forming an insulating film on the upper part of the gate and on the sidewall of the upper part of the columnar first conductivity type semiconductor layer; a step of forming an insulating film on the sidewall of the gate; A step of forming a second conductivity type semiconductor layer on the upper portion of the first conductivity type semiconductor layer; and forming a metal-semiconductor compound on the second conductivity type semiconductor layer and the gate formed on the upper and lower portions of the columnar first conductivity type semiconductor layer step.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] Semiconductor integrated circuits, especially integrated circuits using MOS (Metal Oxide Semiconductor; Metal Oxide Semiconductor) transistors, tend to be more highly integrated. Along with this high integration, the miniaturization of MOS transistors used therein has progressed to the nanometer (nano) field. As the miniaturization of MOS transistors progresses, it becomes more difficult to suppress leakage current, and there is a problem that it is difficult to reduce the occupied area of ​​a circuit in order to secure a required amount of current. In order to solve this problem, there is a proposal for a Surrounding Gate Transistor (SGT) in which the substrate arranges the source, gate, and drain in a vertical direction, and the gate surrounds the columnar semiconductor layer. (eg Patent Documents 1, 2, 3). [0003] Patent Document 1: ...

AI Technical Summary

Problems solved by technology

As the miniaturization of MOS transistors progresses, the suppression of leakage current becomes more difficult, and there is a problem that it is difficult to reduce the occupied area of ​​the circuit in order to ensure the required amount of current.

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