Method for establishing field-effect transistor noise model

A field effect transistor and noise model technology, applied in special data processing applications, instruments, electrical digital data processing and other directions, can solve the problem of not covering the frequency range, unable to reflect the noise distribution, etc., to achieve accurate field effect transistor noise SPICE model Effect

Inactive Publication Date: 2011-01-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

This method has the following two defects: on the one hand, it only considers the noise power density at a specific frequency, and does not cover the entire frequency range; on the other hand, it cannot reflect the real noise distribution only by mathematical methods

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  • Method for establishing field-effect transistor noise model
  • Method for establishing field-effect transistor noise model
  • Method for establishing field-effect transistor noise model

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Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0022] see figure 1 , figure 1 It is a flow chart of the method for establishing the field effect transistor noise model of the present invention. First, field effect transistors to be measured are selected on a plurality of different dies. Preferably, the field effect transistors on different crystal grains of different wafers are selected as the object of measurement, because the deviation of the production process even the field effect transistors on different crystal grains on the same wafer, the performance between them There will also be differences, let alone on different wafers. Therefore, the advantage of this selection is that it can fully cover the process deviation, so that the measured data can better represent the discrete situation of field effect...

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Abstract

The invention relates to a method for establishing a field-effect transistor noise model. The method is characterized by comprising the following steps of: selecting a field-effect transistor to be measured from a plurality of different crystal particles; respectively measuring noises of the field-effect transistor in different frequency ranges and calculating sigma value of each noise; establishing an allocation plan of the sigma values with the measured frequency; and extracting field-effect transistor noise SPICE (simulation program with integrated circuit empahsis) model parameters by utilizing the allocation plan and carrying out Monte Carlo simulation. The field-effect transistor noise model established by adopting the method is more accurate.

Description

technical field [0001] The invention relates to a method for establishing a field effect transistor noise model. Background technique [0002] A field effect transistor (Metal Oxide Semiconductor, MOS) is an important semiconductor device in a semiconductor integrated circuit, and is widely used in the field of integrated circuit technology. In order to predict the performance and reliability of field effect transistor devices in their environment, simulation of field effect transistors is required. [0003] SPICE (Simulation Program with Intergraded Circuit Emphasis) is the most commonly used circuit-level simulation program in the device design industry. Various software manufacturers provide different versions of SPICE software such as Vspice, Hspice, and Pspice. The simulation cores of these software are similar, and they all use California, USA A SPICE simulation algorithm developed at the University of Berkeley. [0004] Often, components in a circuit may generate va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 余泳
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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