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Appratus for treating substrate

A substrate processing device and technology for substrates, which are applied in gaseous chemical plating, coatings, electrical components, etc., can solve problems such as difficulty in uniformly processing substrates

Active Publication Date: 2011-03-30
JUSUNG ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the plasma density of the peripheral portion of the reaction space will be lower than that of the central portion of the reaction space due to the difference in source gas density, and thus it is difficult to process the substrate uniformly.

Method used

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  • Appratus for treating substrate
  • Appratus for treating substrate
  • Appratus for treating substrate

Examples

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Embodiment Construction

[0068] Reference will now be made in detail to the preferred exemplary embodiments, examples of which are illustrated in the accompanying drawings.

[0069] figure 2 A schematic diagram showing a substrate processing apparatus using inductively coupled plasma (ICP) according to an exemplary embodiment of the present invention.

[0070] exist figure 2 Among them, the substrate processing apparatus 110 using ICP includes: a processing chamber 112, which provides a reaction area through the combination of a cover body 112a and a body 112b; several openings 114, passing through the cover body 112a; several insulating plates 116, respectively sealed A plurality of openings 114; a plurality of antennas 118, respectively disposed above the plurality of insulating plates 116; a gas injection unit 124, established on the cover 112a and the plurality of insulating plates 116; and a substrate fixing unit 122, configured in the reaction area and A substrate 120 is placed thereon.

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Abstract

A substrate treatment apparatus includes a process chamber providing a reaction region and including a body and a lid, the lid having a plurality of openings, a plurality of insulating plates sealing the plurality of openings, respectively, a plurality of antennas over the plurality of insulating plates, respectively, a gas injection unit over the lid and the plurality of insulating plates, and a substrate holding unit in the reaction region, wherein a substrate is disposed on the substrate holding unit.

Description

【Technical field】 [0001] The invention relates to a substrate processing device, in particular to a substrate processing device with uniform plasma. 【Background technique】 [0002] In general, semiconductor devices, display devices, or thin-film solar cells are manufactured through the following processes: a deposition process, which deposits a thin film on a substrate; and a photolithography process, which uses a photosensitive material to expose or expose selected areas of the film. covering; and an etching process, patterning selected areas of the film. Among these processes, the deposition process and the etching process are performed in the substrate processing apparatus (set with optimal conditions). [0003] The substrate processing devices used in the deposition and etching process can be divided into inductively coupled plasma (ICP, inductively coupled plasma) type and capacitively coupled plasma (CCP, capacitively coupled plasma) type according to the plasma gener...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCC23C16/50H01J37/32449H01J37/321C23C16/45574
Inventor 李政洛宋明坤都在辙全富一
Owner JUSUNG ENG