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Forming method of metal pattern

A metal pattern and metal layer technology, which is applied in the field of metal pattern formation, can solve the problems of poor edge quality of metal patterns, excessive etching of metal patterns, and easy occurrence of open circuits, and achieves the effect of reducing over-etching phenomenon and improving quality.

Inactive Publication Date: 2013-06-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] As the size of the device shrinks, the metal wire becomes thinner and the size of the metal pad becomes smaller and smaller, so the quality requirements of the metal pattern are also getting higher and higher. If the edge of the metal pattern is over-etched , it will make some places too thin, and it will be easy to break the circuit
[0005] However, the edge of the metal pattern formed by the above-mentioned prior art is over-etched, so that the edge quality of the metal pattern is not good.

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Embodiment Construction

[0018] It can be seen from the background art that the method for forming metal patterns in semiconductor devices in the prior art includes the following steps: forming a metal layer on a semiconductor substrate, such as a metal Al layer; then etching the metal layer under the protection of a mask layer, such as dry Etching is used to remove unnecessary metal layers and retain metal layers to form metal patterns; then a cleaning step is performed to wash away etching residues and etching residual solutions.

[0019] As the size of the device shrinks, the metal wire becomes thinner and the size of the metal pad becomes smaller and smaller, so the quality requirements of the metal pattern are also getting higher and higher. If the edge of the metal pattern is over-etched , it will make some places too thin, and it will be easy to break the circuit. However, the edge of the metal pattern formed by the above prior art has the problem of over-etching, so that the edge quality of th...

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Abstract

The invention provides a forming method of a metal pattern, comprising the following steps of supplying a semiconductor substrate; forming the metal pattern on the surface of the semiconductor substrate; baking the metal pattern; and cleaning the baked metal pattern. The invention improves the quality of the formed metal pattern.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a metal pattern. Background technique [0002] In semiconductor manufacturing processes, metal patterns, such as metal wires and metal pads, generally need to be formed in semiconductor devices. Among them, the metal wire is used to electrically connect the devices of the same layer or different layers, and the metal pad is used to realize the electrical connection between the semiconductor device and the external circuit. [0003] The method for forming the above metal pattern comprises the steps of: forming a metal layer, such as metal Al, on a semiconductor substrate; then etching the metal layer under the protection of a mask layer, such as dry etching, to remove unnecessary metal layers and retain A metal layer for forming a metal pattern; followed by a cleaning step to wash off the etching residue and the etching residue solution. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/60
CPCH01L2924/0002
Inventor 张海洋符雅丽
Owner SEMICON MFG INT (SHANGHAI) CORP