Unlock instant, AI-driven research and patent intelligence for your innovation.

Chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., to achieve the effects of high stability, long service life, and long storage time

Inactive Publication Date: 2011-06-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF22 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the technical problem to be solved by this invention is in order to overcome the problem of the storage stability of the acidi

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing solution
  • Chemical mechanical polishing solution
  • Chemical mechanical polishing solution

Examples

Experimental program
Comparison scheme
Effect test
No Example Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses chemical mechanical polishing solution, which contains abrasive grains, polymer and water, and also contains a stabilizing agent used for improving the stability of polishing slurry. In the polishing solution, the grain size of the abrasive grains is reduced along with the increase of time. The chemical mechanical polishing solution has higher stability and longer storage time and service life.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] In the field of chemical mechanical polishing (CMP) in the semiconductor industry, the chemical mechanical polishing fluids used are mainly divided into acidic and alkaline slurries. Among them, the stability of alkaline slurry is relatively good, but there is no suitable oxidizing agent, and the problems of surface cloud point and slight scratches are easily caused during the polishing process. Acid slurry shows certain advantages in this respect. However, the size of the abrasive particles in the acidic slurry will gradually grow under the action of the chemical components in the slurry as the storage time prolongs. When the particle size is greater than 120 nanometers, phenomena such as sedimentation and stratification will occur, which will seriously affect the polishing quality and cause product failure. Therefore, controlling the growth of abrasive pa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09G1/02H01L21/306
CPCH01L21/3212C09G1/02
Inventor 荆建芬蔡鑫元
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD