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Method for treating metal fuse of single aluminium
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A technology of metal fuses and processing methods, which is applied in the field of CMOS silicon gate technology, and can solve the problems of metal fuses being cut off, pressing solder joints, etc.
Inactive Publication Date: 2011-06-29
PEKING UNIV FOUNDER GRP CO LTD +1
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[0009] The invention provides a metal fuse treatment method for single aluminum, which is used to overcome the inconsistency between the opening size of the passivation layer on the metal fuse and the opening size of the passivation layer of the pressure soldering point in the prior art, which causes the metal fuse to be cut or broken. There are problems such as residues in the welding points
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Embodiment 1
[0033] Embodiment 1, a single aluminum metal fuse processing method, such as specific implementation steps image 3 Shown:
[0034] Step 301, completing the metal layer and passivation layer according to conventional processing steps;
[0035] Step 302, coating a photoresist on the passivation layer, after the photoresist is exposed and developed, the first opening (such as Figure 4 , icon 1 position);
[0036] Step 303, placing the entire wafer in an etching gas atmosphere, performing gas etching, and removing the first opening (such as Figure 4 , the position of icon 1) in the passivation layer (after etching, the effect picture is as follows Figure 5 shown);
[0037] The concentration of the etching gas atmosphere and the time of the wafer in the etching gas atmosphere are proportional to the opening size of the passivation layer on the metal fuse region;
[0038] Step 304, removing the photoresist on the passivation layer;
[0046] Embodiment 2, a metal fuse processing method for single aluminum, specifically includes steps such as Figure 7 Shown:
[0047] Step 701, complete the metal layer and passivation layer according to conventional processing steps;
[0048] Step 702, coating a photoresist on the passivation layer, after the photoresist is exposed and developed, an opening of the passivation layer exposing the fuse area and pad area is obtained, wherein the opening of the passivation layer on the metal fuse area The size is consistent with the opening size of the passivation layer on the pad;
[0049] Step 703, place the entire wafer in an etching gas atmosphere, perform gas etching, and etch away the fuse area (such as Figure 8 , icon 1 position) and pad area (such as Figure 8 , the position of icon 2) the passivation layer in the opening area;
[0050] Remove the passivation layer on the metal fuse and the pad, and remove the passivation layer on the pad so that the metal layer can ...
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Abstract
The invention discloses a method for treating metal fuse of single aluminium. The method comprises the following steps: exposing and developing photoresist coated on a waferpassivation layer to obtain a first opening exposing a passivation layer in a metal fuse region; carrying out gas etching on the wafer and removing the passivation layer in a first opening region; exposing and developing photoresist re-coated on the passivation layer to obtain a second opening exposing a passivation layer in a pad region; and carrying out gas etching on the wafer again and removing the passivation layer in a second opening region. By applying the method provided by the embodiment of the invention, the problem that the size of the opening on the passivation layer on the metal fuse is inconsistent with the size of the opening on the pad passivation layer, thus residues exist after metal fuse etching out or pad etching in the prior art is solved.
Description
technical field [0001] The present invention relates to the present invention, which is mainly used in CMOSsilicon gate (complementary metal oxidesemiconductor) technology, and particularly relates to a single aluminum metal fuse processing method. Background technique [0002] In the traditional 0.5um CMOSsilicon gate (complementary metal oxidesemiconductor) process, because the thickness of the top layer metal is thick and the etching of the passivation layer is difficult to control, generally only the sub-top metal layer is used as the metal fuse. Therefore, for the SPSM (single-polycrystalline single-aluminum) silicon gate process, the industry cannot directly use the top-layer metal as a metal fuse. The manufacturing process of the metal fuse (Fuse) is that after the metal strip is formed, a passivation layer is formed on the metal. Because the metal fuse needs to apply a voltage to blow the metal strip when necessary, and a window needs to be carved on the passiva...
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