Memory and memory read-write control method and system

A technology of memory and storage area, applied in the field of storage, can solve the problem of not making full use of SLC flash memory and MLC flash memory data read and write speed, and achieve the effect of improving read and write speed and convenient use

Inactive Publication Date: 2011-08-03
SHENZHEN NETCOM ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a kind of memory, aiming at solving the problem that the hybrid memory in the prior art is only the integration of

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  • Memory and memory read-write control method and system
  • Memory and memory read-write control method and system
  • Memory and memory read-write control method and system

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[0026] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.

[0027] The memory provided by the embodiment of the present invention includes at least one single-level cell SLC flash memory and at least one multi-level cell MLC flash memory. The storage area of ​​the SLC flash memory is set to the storage area before the logical address of the memory. The storage area is set to the storage area behind the logical address of the memory, where the MLC flash memory includes but is not limited to 2bit / cell, 3bit / cell, 4bit / cell and other more bit flash memory, and it is not necessary to limit the present invention here. .

[0028] In the embodiment of the pres...

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Abstract

The invention is applied in the technical field of storage, and provides a memory, a memory read-write control method and a memory read-write control system. The memory comprises at least one single-level cell (SLC) flash memory and at least one multi-level cell (MLC) flash memory, wherein the storage region of the SLC flash memory is set as a logic address forward storage region of the memory, and the storage region of the MLC flash memory is set as a logic address backward storage region of the memory. According to the embodiment, perfect combination of respective advantages of the SLC flash memory and the MLC flash memory is realized, the data read-write speed of the memory is improved by fully using the respective advantages of the SLC flash memory and the MLC flash memory, and convenience is brought to a user in use.

Description

technical field [0001] The invention belongs to the technical field of storage, and in particular relates to a memory and a method and system for controlling reading and writing of the memory. Background technique [0002] Memory can be divided into single-level cell (Single-Level Cell, SLC) flash memory and multi-level cell (Multi-Level Cell, MLC) flash memory according to its specific composition framework, wherein, pure SLC flash memory has read / write speed The advantages of high speed and long life, but there are also disadvantages of high price and low storage capacity; the capacity of pure MLC flash memory can be made large, and the price is cheap, but the read / write speed of MLC flash memory is slow and the life is short . [0003] Patent application number 200680051435.2 discloses a portable data storage device integrated with multiple flash memory units, the portable data storage device includes at least one SLC flash memory and at least one MLC flash memory to int...

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Application Information

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IPC IPC(8): G06F12/02G11C11/56
Inventor 李志雄蒋云南李中政
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
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