Unlock instant, AI-driven research and patent intelligence for your innovation.

Memory circuit and control circuit device

A technology for controlling circuit devices and memory circuits, which is applied in the field of memory circuits, can solve the problems of large area occupation, poor speed performance, etc., and achieve the effect of reducing the number

Active Publication Date: 2011-08-10
TAIWAN SEMICON MFG CO LTD
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both methods require a large number of level shifters in the memory, thus occupying a large area
In addition, these approaches still suffer from poor speed performance due to the gate delay of the level shifter and leakage current losses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory circuit and control circuit device
  • Memory circuit and control circuit device
  • Memory circuit and control circuit device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] The following describes the preferred embodiment of the present invention. Each embodiment is used to illustrate the principles of the present invention, but not to limit the present invention. The scope of the invention should be judged by the appended claims.

[0039] First, an example system of the present invention will be described with the drawings. Although these systems will be described in detail herein, this is done for illustrative purposes only and other variations of the systems are possible. After the example system is introduced, the description of the circuit with the level shifter in the zone control circuit will continue.

[0040] figure 1 Is a block diagram of a system 100 having a wordline driver 125 according to an embodiment of the present invention. The system 100 can be a structure used on a general computer. The system 100 includes a processing device 110, memory 115, and one or more user interface devices 120, all connected to a local inte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A representative circuit device includes a local control circuit having a level shifter, wherein in response to receipt of a first address signal the level shifter shifts the first address signal from a first voltage level to a second voltage level, providing a level shifted first address signal; and a word-line driver having at least one input for receiving a plurality of address signals, wherein the at least one input includes a first input that is coupled to the local control circuit to receive the level shifted first address signal, and an output that is electrically coupled to a word line of a memory cell array. The invention reduces the quantity of the level shifter in the duplicate supply memory device by using the level shifter on the local control circuit.

Description

technical field [0001] The present invention relates generally to electronic circuits, and more particularly to memory circuits with word line drivers and level shifters. Background technique [0002] Generally, a word line driver of a memory has multiple voltage levels, and can cooperate with a level shifter to read or write memory cells in the memory. Memory cell and word line drivers use higher voltages than other electronic components in the memory to achieve high speed performance and data reliability. Other electronic components of the memory use lower voltages than the memory cell and word line drivers in order to reduce losses caused by leakage currents. [0003] Traditionally, there are two implementations of the level shifter and the word line driver. The first way is to use a level shifter on each word line driver, and the second way is to use a level shifter when the memory is mainly controlled. Both methods need to use a large number of level shifters in the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/12
CPCG11C8/08G11C8/10
Inventor 陆崇基李政宏廖宏仁陈旭顺郑宏正吴重毅乌普·夏拉斯·钱德拉
Owner TAIWAN SEMICON MFG CO LTD