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Evaporation device

A technology of evaporation and evaporation speed, which is applied in the directions of vacuum evaporation plating, sputtering plating, ion implantation plating, etc., and can solve the problems of time (short life)

Active Publication Date: 2015-09-23
HITACHI ZOSEN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Accordingly, there arises a problem that the time (lifetime) during which the second crystal resonator can detect the vapor deposition rate is extremely shortened.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Next, Embodiment 1 of the vapor deposition apparatus according to the present invention will be described with reference to the drawings.

[0057] (overall structure)

[0058] like figure 1 As shown, a substrate holder 13 for supporting a substrate 12 serving as a material to be vapor-deposited is disposed on the upper portion of the film-forming chamber 11 maintained in a vacuum state, and a dispersion container 14 is disposed facing the substrate 12 at the lower portion of the film-forming chamber 11 . Then, outside the lower part of the film forming chamber 11, a first evaporating unit 16A for evaporating the first evaporating material by a heating device and a second evaporating unit 16B for evaporating the second evaporating material by a heating device are respectively provided. Then, the material introduction pipes 18A, 18B respectively connected to the first and second evaporation units 16A, 16B are connected to the confluence pipe 18C, and the confluence pipe ...

Embodiment 2

[0105] The vapor deposition speed adjustment mechanism 34 in the above-mentioned embodiment 1 is composed of an element adjustment device 36 that fixes the discharge port 32a of the detection nozzle 32 and makes the vapor deposition speed detection element 33 approach and separate, but in the embodiment 2, as Figure 4 As shown, a vapor deposition rate adjustment mechanism 51 that fixes the vapor deposition rate detection element 53 and adjusts the position of the discharge port 55a of the detection nozzle 55 is provided. In addition, the same code|symbol is attached|subjected to the same member as Example 1, and description is abbreviate|omitted.

[0106] The vapor deposition speed adjustment mechanism 51 in the second embodiment is fixed by an advancing and retreating detection nozzle 55 slidably provided in a guide cylinder 54 penetrating through the side wall 14s of the dispersion container 14, and is fixed via an element holder 52. The vapor deposition speed detection ele...

Embodiment 3

[0111] Embodiment 3 is the same as embodiment 2, makes the outlet advance and retreat, but, as Figure 5 As shown, a telescopic detection nozzle 71 is installed through the side wall 14s of the dispersion container 14, so that the discharge port 71a can move forward and backward freely, and the nozzle adjustment device composed of a linear moving device composed of a rack and pinion mechanism is used. 56, the vapor deposition device that expands and contracts the detection nozzle 71, moves the discharge port 71a, and adjusts the distance L between the discharge port 71a and the vapor deposition speed detection element 53 is provided with a nozzle adjustment device 56 with the same structure. In addition, the same code|symbol is attached|subjected to the same member as Embodiment 2, and description is abbreviate|omitted.

[0112] According to Example 3, the same effect as that of Example 1 or Example 2 can be obtained.

[0113] In addition, in the first to third embodiments de...

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PUM

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Abstract

The invention discloses a vapor deposition device. In the vapor deposition device, even if the vapor deposition speed relative to a base plate (12) is greatly changed, the vapor deposition speed relative to a vapor deposition speed detection component (33) can be detected precisely and the vapor deposition speed can be controlled properly. In a film-forming chamber (11) in a vacuum state, a dispersing container (14) with a plurality of vapor deposition nozzles (15) is arranged opposite to the base plate (12); a detection nozzle (32) and the vapor deposition speed detection component (33) arranged opposite to the detection nozzle (32) run through the dispersing container (14); a vapor deposition speed adjusting mechanism (34), by which the vapor deposition speed detection component (33) can approach and depart from a discharge port (32a) of the detection nozzle (32), is provided; and the vapor deposition speed is detected precisely by the vapor deposition speed detection component (33) by correspondingly adjusting the distance (L) between the discharge port (32a) of the detection nozzle (32) and the vapor deposition speed detection component (33) through the vapor deposition speed relative to the base plate (12).

Description

technical field [0001] The present invention relates to a vapor deposition device provided with a detection device for detecting a vapor deposition rate (vapor deposition rate). Background technique [0002] For example, Patent Document 1 discloses a top deposition type vapor deposition device. In this vapor deposition apparatus, a substrate is held by a holder on an upper portion of a film forming chamber kept in a vacuum state. In addition, in the lower part of the film forming chamber, a dispersion container having a plurality of discharge nozzles is disposed facing the substrate. Then, a plurality of evaporation units for evaporating the evaporation material are provided below the film formation chamber. Furthermore, material introduction pipes are connected to these evaporation units, and these material introduction pipes pass through the bottom wall of the film formation chamber and are connected to the above-mentioned dispersion container. Then, control valves for ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C14/24
Inventor 大工博之上川健司
Owner HITACHI ZOSEN CORP