Method for building MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) model

Abstract

The invention provides a method for building a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) model, comprising the following steps: 1. build a coordinate system by taking grid length and grid width of the MOSFET as coordinate axes and extract a global model from the whole device dimension array of the coordinate system; 2. set the parameters including Dvt0, Dvt1, Dvt2, n1x, prwg, prwb, k3, k3b, w0, dwg, dwb, b0, b1, l1, lw, lw1, ww, w1, ww1, which are in the global model and are extracted in the step one, as 0; 3. extract single models of all MOSFET devices in the device dimension array on the basis of the global model extracted in the step 2; 4. extract a blocking model. In the method, the blocking model is built by adopting a global method, the advantages of the global model and the blocking model are combined, while discontinuity of parameters is eliminated, and good model precision is achieved, and moreover, the model can be quickly built.

Description

technical field [0001] The invention relates to the field of semiconductor device models, in particular to a method for establishing a metal-oxide-semiconductor field effect transistor (MOSFET) model. Background technique [0002] With the development of the integrated circuit industry, the scale of integrated circuits is getting bigger and bigger, and the complexity is getting higher and higher. Modeling and simulating devices has become an increasingly important step in integrated circuit design. It can greatly shorten the product design and manufacturing cycle, improve efficiency, save costs, and increase yield. At present, two methods are mainly used to establish MOSFET models: one is the Binning Model method, and the other is the Global Model method. [0003] The block model (Binning Model) is generally in figure 1 Extracted from the device size array shown. In the figure, the abscissa L is the gate length of the MOSFET, and the ordinate W is the gate width of the M...

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Problems solved by technology

But for a single device, the global model (Global Model) is not as

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