Nitride semiconductor light-emitting element and method for manufacturing same
A technology of nitride semiconductors and light-emitting elements, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as low luminous efficiency and inability to obtain sufficient light output
Active Publication Date: 2012-09-12
SAMSUNG ELECTRONICS CO LTD
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Problems solved by technology
[0008] Therefore, in any nitride semiconductor light-emitting device, there is a problem that the luminous efficiency is low and sufficient light output cannot be obtained.
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[0043] Regarding the nitride semiconductor light-emitting element related to the embodiment of the present invention, the figure 1 Be explained. figure 1 is a cross-sectional view showing a nitride semiconductor light emitting element.
[0044] Such as figure 1 As shown, in the nitride semiconductor light-emitting element 10 of this embodiment, a buffer (transition) layer (not shown) with a thickness of about 3 μm is formed on a substrate 11 transparent to the emission wavelength, such as a sapphire substrate. Gallium nitride layer 12 (hereinafter referred to as GaN layer 12 ).
[0045] An n-type gallium nitride cladding layer 13 doped with silicon (Si) (hereinafter referred to as n-type GaN cladding layer or first cladding layer 13 ) is formed on the GaN layer 12 with a thickness of about 2 μm.
[0046] Active layer 14 having a nitride semiconductor including In is formed on n-type GaN cladding layer 13 . The active layer 14 is, for example, a gallium nitride barrier laye...
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Disclosed are: a nitride semiconductor light-emitting element which is capable of achieving sufficient light output; and a method for manufacturing the nitride semiconductor light-emitting element. Specifically disclosed is a nitride semiconductor light-emitting element which comprises: a first cladding layer (13) that comprises an n-type nitride semiconductor; an active layer (14) that is formed on the first cladding layer (13) and comprises an In-containing nitride semiconductor; a GaN layer (17) that is formed on the active layer (14); a first AlGaN layer (18) that is formed on the GaN layer (17) and has a first Al composition ratio (x1); a p-type second AlGaN layer (19) that is formed on the first AlGaN layer (18), and has a second Al composition ratio (x2) that is higher than the first Al composition ratio (x1), while containing more Mg than the GaN layer (17) and the first AlGaN layer (18); and a second cladding layer (20) that is formed on the second AlGaN layer (19) and comprises a p-type nitride semiconductor.
Description
technical field [0001] The present invention relates to a nitride semiconductor light-emitting element and a manufacturing method thereof. Background technique [0002] In the prior art, for a nitride semiconductor light emitting element, there is known a nitride semiconductor light emitting element in which a p-type AlGaN layer doped with Mg is formed on an active layer having a nitride semiconductor including In as a An electron barrier layer that confines electrons in an active layer (for example, refer to Patent Document 1 or Patent Document 2). [0003] In the nitride semiconductor light-emitting device of Patent Document 1, the p-type AlGaN layer is formed by MOCVD (Metal Organic Chemical Vapor Deposition) using N2 gas in order to suppress the deterioration of the active layer. a first p-type AlGaN layer; and a second p-type AlGaN layer formed by MOCVD using H2 gas in order to form a barrier potential. [0004] However, in this nitride semiconductor light-emitting de...
Claims
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CPCH01L21/02389H01L21/02458H01L21/02505H01L21/0254H01L21/02576H01L21/02579H01L21/0262H01L33/007H01L33/025H01L33/06H01L33/32
Inventor 名古肇橘浩一冈俊行木村重哉布上真也
Owner SAMSUNG ELECTRONICS CO LTD