30w 24dB attenuating plate of aluminum nitride ceramic substrate
A technology of aluminum nitride ceramics and aluminum nitride substrates, which is used in electrical components, circuits, waveguide devices, etc., can solve the problem that the attenuation accuracy cannot meet the requirements, can not meet the application requirements of frequency bands above 2G, and the return loss increases and other issues to achieve the effects of improving stability, expanding range, and increasing power capacity
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2012-10-03
- Estimated Expiration
- Not applicable · inactive patent
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Figure 1
Abstract
Description
Technical field
[0001] The invention relates to an aluminum nitride ceramic substrate attenuation sheet, in particular to an aluminum nitride ceramic substrate attenuation sheet of 30 watts and 24 dB. Background technique
[0002] At present, most communication base stations use high-power ceramic load sheets to absorb the reverse input power in the communication components. High-power ceramic load sheets can only consume and absorb excess power, and cannot monitor the working status of the base station in real time. , When the base station fails to make a judgment in time, it has no protective effect on the equipment. The attenuator with three resistance designs can not only absorb the reverse input power in the communication component in the communication base station, but also adjust the power level on the high-frequency circuit, decoupling, and protect the related equipment.
[0003] As aluminum nitride ceramics is still an emerging industry, there is no diversified pattern in...
Examples
Embodiment Construction
[0013] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0014] Such as figure 1 As shown, the 30-watt 24dB attenuation film of the aluminum nitride ceramic substrate includes an aluminum nitride substrate 1 with a size of 5*5*1MM. The back surface of the aluminum nitride substrate 1 is printed with a back conductive layer, and the front surface of the aluminum nitride substrate 1 There are printed wires 2 and resistors R1, R2, R3. The resistors R1, R2, R3 are connected by wires to form an attenuation circuit, and the attenuation circuit is electrically connected to the back conductive layer through silver paste, so that the attenuation circuit is connected to ground. The attenuation circuit is symmetrical along the center line of the aluminum nitride substrate. The output end of the attenuation circuit is connected to a pad 5, the input end is connected to a pad 6, and the two pads 5 and 6 are sy...