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Heating apparatus and annealing apparatus

A heating device and heat dissipation substrate technology, applied in ion implantation plating, gaseous chemical plating, coating, etc., can solve the problems of uneven heat dissipation and inability to dissipate heat, and achieve uniform and high-efficiency heat dissipation

Inactive Publication Date: 2012-10-24
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when air bubbles exist in the bonding layer 4 made of solder, the heat dissipation becomes uneven and efficient heat dissipation cannot be achieved.

Method used

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  • Heating apparatus and annealing apparatus
  • Heating apparatus and annealing apparatus
  • Heating apparatus and annealing apparatus

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Embodiment Construction

[0020] Hereinafter, an embodiment of the heating device and the annealing device of the present invention will be described in detail based on the drawings. figure 1 is a cross-sectional view showing a schematic structure of an annealing apparatus using a heating apparatus according to an embodiment of the present invention, figure 2 is a plan view showing the top surface (surface) of the heating device, image 3 is a partial enlarged view showing the LED element provided in the first embodiment of the heating device, Figure 4 is a diagram schematically showing an example of the connection state of the LED element group, Figure 5 It is a process diagram for explaining the manufacturing method of the heating device. Here, a case where the object to be processed is a semiconductor wafer made of a silicon substrate and the wafer is annealed with impurities implanted on its surface will be described as an example.

[0021] Such as figure 1 As shown, the annealing device 1...

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Abstract

Disclosed is a heating apparatus which is provided with an LED module (54) that has: a heat dissipating substrate (72) which is composed of a metal; an insulating layer (74) which is directly formed on the heat dissipating substrate; a plurality of wiring elements (76) which are arranged on the insulating layer and form a wiring pattern; a plurality of LED elements (70) which are provided on the wiring elements, respectively; and a metal wiring line (82) which electrically connects the adjacent LED elements to each other in series. With such configuration, heat of the LED elements can be uniformly and efficiently dissipated.

Description

technical field [0001] The present invention relates to a heating device having an LED (Light Emitting Diode) element and an annealing device including the heating device. Background technique [0002] Generally, in order to manufacture a semiconductor integrated circuit, various processes such as film formation, oxidation diffusion, modification, etching, and annealing are repeatedly performed on semiconductor wafers such as silicon substrates. Among these treatments, in the annealing treatment for activating impurity atoms doped in the wafer after ion implantation, it is necessary to raise and lower the temperature of the semiconductor wafer more rapidly in order to minimize the diffusion of impurities. [0003] In a conventional annealing apparatus, a wafer is heated using a halogen lamp or the like, but it takes at least about 1 second from when the halogen lamp is turned on until it becomes stable as a heat source. Therefore, recently, an annealing device using an LED ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/26C23C14/50C23C4/10C23C14/58C23C16/46H01L21/265H01L33/64
CPCH01L25/0753H01L2924/01019H01L21/67115H01L2224/48091H01L33/60H01L2924/09701H01L21/67109H01L33/64H01L2924/00014C23C4/10C23C16/46H01L21/26
Inventor 铃木智博大矢和广米田昌刚
Owner TOKYO ELECTRON LTD