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Methods of self-aligned growth of chalcogenide memory access device

A chalcogenide, access device technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of high cost, damage, extra materials, etc.

Active Publication Date: 2012-10-24
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional methods can require several costly and additional processing steps and can also cause damage to previously formed materials during the formation of subsequent materials

Method used

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  • Methods of self-aligned growth of chalcogenide memory access device
  • Methods of self-aligned growth of chalcogenide memory access device
  • Methods of self-aligned growth of chalcogenide memory access device

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Embodiment Construction

[0016] In the following Detailed Description, reference is made to the accompanying drawings which form a part hereof and in which is shown by way of illustration specific embodiments in which certain embodiments may be practiced. It should be understood that like reference numerals refer to like elements throughout the drawings. These example embodiments are described in sufficient detail to enable those skilled in the art to practice the embodiments. It is to be understood that other embodiments may be utilized, and structural, material, and electrical changes may be made without departing from the scope of the present invention, only some of which are discussed in detail below.

[0017] According to disclosed embodiments, a memory access device for accessing memory elements of a memory cell is formed using a self-aligned fabrication method. Self-aligned fabrication techniques require fewer processing steps than many conventional approaches (such as, for example, by reducin...

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Abstract

Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Description

technical field [0001] The disclosed embodiments relate generally to memory devices, and more particularly to methods of forming self-aligned chalcogenide memory access devices for use in memory devices. Background technique [0002] A non-volatile memory device is capable of retaining stored information even when power to the memory device is turned off. Traditionally, non-volatile memory devices occupy a large amount of space and consume a large amount of power. Accordingly, non-volatile memory devices have been used primarily in systems where limited power consumption can be tolerated and battery life is not an issue. [0003] One type of non-volatile memory device includes resistive memory cells as memory elements therein. Resistive memory elements are those in which the resistive state can be programmably changed to represent two or more numerical values ​​(eg, 1, 0). Resistive memory elements store data when the physical properties of the memory element are changed ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH01L45/143H01L27/2409H01L27/2463H01L45/1608H01L45/165H01L45/085H01L45/144H01L27/2472H01L45/1683H01L45/12H01L45/04H01L45/1658H01L45/1233H10N70/00H10B63/20H10B63/82H10B63/80H10N70/245H10N70/826H10N70/8825H10N70/8828H10N70/021H10N70/043H10N70/046H10N70/066H10B63/84H10N70/231H10N70/801
Inventor 尼尔·格里利巴斯卡尔·斯里尼瓦桑古尔特杰·桑胡约翰·斯迈思
Owner MICRON TECH INC