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Seebeck/peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process

A dielectric and multi-layer stacking technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric devices that only use the Peltier or Seebeck effect, etc., can solve problems such as photolithography processing

Inactive Publication Date: 2012-11-07
CONSORZIO DELTA TI RES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disclosed process, while much simpler than previous fabrication processes used to fabricate nanometer-sized elongated structures, still requires photolithographic processing, anisotropic etching, and conformal deposition processes in vacuum

Method used

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  • Seebeck/peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process
  • Seebeck/peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process
  • Seebeck/peltier thermoelectric conversion device employing a stack of alternated nanometric layers of conductive and dielectric material and fabrication process

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Embodiment Construction

[0055] The exemplary embodiments presented below have exclusively illustrative purposes and are not intended to limit the invention, which may be practiced by any person skilled in the art, even by changing the deposition-oxidation process, or using different conductivity or semiconductivity conductive materials and different dielectric materials.

[0056] refer to figure 1 , in constructing the multilayer stack of the present invention, one may start with the first electrical conductivity of doped silicon C1 deposited in a nanometer thickness over a substantially planar dielectric substrate S (e.g. a planar glass plate) by layer: at a temperature of 600-800°C, put in N 2 A suitable dopant compound such as pH diluted in 3 , AsH 3 or B 2 h 6 and silane (SiH 4 ) gas phase (CVD or LP-CVD) into a low-pressure, heated deposition chamber.

[0057] This first nano-layer C1 of doped silicon semiconductor may have a substantially uniform thickness of about 40-50 nm, with little ...

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Abstract

A multilayered stack useful for constituting a Seebeck-Peltier effect electrically conductive septum with opposite hot-side and cold-side metallizations for connection to an electrical circuit, comprises a stacked succession of layers (Ci) of electrically conductive material alternated to dielectric oxide layers (Di) in form of a continuous film or of densely dispersed nano and sub-nano particles or clusters of particles of oxide; at least the electrically conductive layers having mean thickness ranging from 5 to 100 nm and surface irregularities at the interfaces with the dielectric oxide layers of mean peak-to-valley amplitude and mean periodicity comprised between 5 to 20 nm. Various processes adapted to build a multilayered stack of these characteristics are described.

Description

technical field [0001] The present invention relates generally to Seebeck / Peltier effect thermoelectric conversion devices, and in particular to the use of layers of conductive or semiconducting material deposited over even large-sized substrates by generally planar processes with usable and non-critical optical Devices with electrical contacts defined by noncritical lithographic or serigraphic techniques. Background technique [0002] The Seebeck effect is a thermoelectric phenomenon according to which a temperature difference at opposite ends of a long and narrow conductor or semiconductor generates electricity. This effect, discovered by physicist Thomas J. Seebeck in 1821, shows that when subjected to a temperature gradient A potential difference exists across the two ends of a conductive rod. including different materials A and B (at temperature T 1 and T 2 ) between two junctions, the potential difference between the two junctions is given by: [0003] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/32H01L35/34
CPCH01L35/32H01L35/34H10N10/01H10N10/17
Inventor D·达杜西G·塞罗弗里尼
Owner CONSORZIO DELTA TI RES