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Method and device for improving read-write performance of NAND flash memory

A flash memory and performance technology, which is applied in the field of improving the read and write performance of NAND flash memory, can solve the problems of reducing the service life of NAND flash memory and affecting the read and write performance of NAND flash memory, and achieve the effect of improving read and write performance and service life, and improving read and write performance

Active Publication Date: 2015-07-01
ANYKA (GUANGZHOU) MICROELECTRONICS TECH CO LTD
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Problems solved by technology

[0008] Embodiments of the present invention provide a method and device for improving the reading and writing performance of NAND flash memory, so as to solve the problem that in the prior art, the way NFTL uses linked lists and the mapping relationship from garbage collection mechanism management logic to physical affects the reading and writing performance of NAND flash memory and reduces the NAND flash storage performance. The problem of the service life of flash memory

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  • Method and device for improving read-write performance of NAND flash memory
  • Method and device for improving read-write performance of NAND flash memory
  • Method and device for improving read-write performance of NAND flash memory

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Embodiment Construction

[0048] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0049]The embodiment of the present invention improves the method and device for reading and writing performance of NAND flash memory, aiming at the way in which NFTL uses linked list and garbage collection mechanism management logic to physical mapping relationship in the prior art, which affects the reading and writing performance of NAND flash memory and reduces the service life of NAND flash memory When the system is initialized, the logic-to-physical mapping re...

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Abstract

The invention discloses a method and a device for improving the read-write performance of the NAND flash memory. The method includes searching a deleted file in the NAND flash memory during system initialization; determining the logical address of the deleted file; and deleting the logical-to-physical mapping relation corresponding to the logical address in the NAND flash translation layer (NFTL) and enabling the physical block corresponding to the logical address to become a free block. According to the method and the device, the NFTL can obtain free physical blocks timely during frequent file deleting and recopying processes, and the read-write performance and the service life of the NAND flash memory can be improved.

Description

technical field [0001] The invention relates to the technical field of reading and writing of embedded system memory, in particular to a method and device for improving the reading and writing performance of NAND flash memory. Background technique [0002] Most of the storage devices used in current portable electronic products, such as mobile phones and walkmans, are flash memory, also known as flash memory. Flash memory is non-volatile memory that can be erased and reprogrammed in blocks of memory cells called blocks. The write operation of any flash device can only be performed in empty or erased cells, so in most cases, the erase operation must be performed before the write operation. Due to this feature of the flash memory, traditional file systems, such as FAT16, FAT32, NTFS, ext2, etc., cannot directly work on the flash memory. [0003] In the prior art, for NAND flash memory (NAND flash Memory), NFTL (NAND Flash Translation Layer, NAND flash translation layer) is u...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
Inventor 艾骏胡胜发
Owner ANYKA (GUANGZHOU) MICROELECTRONICS TECH CO LTD
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