Dummy pattern and method for forming same

Abstract

The invention discloses a dummy pattern and a method for forming the same. The method comprises the following steps of: supplying an arrangement region, wherein the arrangement region comprises an arrangement pattern which has a first density; a plurality of first dummy patterns are inserted into the arrangement pattern and have second densities; the second densities correspond to the first density; the arrangement region is partitioned to define a plurality of sub regions; the sub regions have third densities; the sizes of the first dummy patterns are adjusted according to differences between the third densities and the second densities; and the arrangement pattern and the first dummy patterns are output to an optical mask.

Description

technical field [0001] The invention relates to a dummy pattern and a method for forming the dummy pattern, in particular to a dummy pattern used in a planarization process and a method for forming the dummy pattern. Background technique [0002] With the advancement of semiconductor technology, the dimensions of components in integrated circuits and the wiring connecting them continue to shrink, and in order to form fine patterns with high precision, the flatness of the substrate surface is also required to increase. In the known technology, a chemical mechanical polishing (CMP) process is often used as the main planarization process, and the grinding result of the chemical mechanical polishing (CMP) process has a great influence on the subsequently formed pattern. In detail, when a chemical mechanical polishing (CMP) process is performed, the polishing rate of the low pattern density region is higher than that of the high pattern density region. Therefore, regions with di...

AI Technical Summary

Problems solved by technology

Although the dummy pattern can improve the density difference between the low pattern density area and the high pattern density area, but with the complexity of integrated circuit design, more areas with different pattern densities are distributed on the wafer, so that the dummy pattern can improve the pattern density difference The effect is limited, and even the improvement effect of the dummy pattern on the pattern density difference is reduced

In addition, the known dummy patterns still have disadvantages such as insufficient resistance to stress generated between regions with different pattern densities on the substrate, elongated optical proximity correction (OPC), etc.

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