Silicon carbide crystal growth furnace

Abstract

The invention discloses a silicon carbide crystal growth furnace which comprises a dry pump, also comprises a pneumatic gate valve, a molecular pump, a pneumatic valve and a vacuum gauge which are orderly connected with a furnace body, and a pressure gauge connected with the pneumatic valve; the furnace also comprises a motion unit which comprises a coil movement control mechanism and an heat insulation sleeve movement control mechanism, and a heating unit which comprises a pyrometer, a radio frequency power supply, a coil, a heat insulation sleeve disposed in the furnace body, and a crucible disposed in the heat insulation sleeve, wherein the radio frequency power supply is connected with the coil, and the heat insulation sleeve movement control mechanism and the coil movement control mechanism control the coil and the heat insulation sleeve to perform elevating movement. The device can reasonably control the air pressure inside the crucible during the SIC crystal growth process, control a radial temperature gradient in the crucible by using the matched movement of the coil and the heat insulation sleeve, optimize the pressure field and temperature field in the furnace, and thus ensure the reasonable distribution of the temperature in the crucible. Defects of the crystal are reduced to be the lowest, and thus the quality of the crystals is controlled.

Description

technical field [0001] The invention relates to the technical field of growth furnaces, in particular to a silicon carbide crystal growth furnace. Background technique [0002] Semiconductor integrated circuit single crystal has the characteristics of wide bandgap, high thermal conductivity, high electron saturation migration rate, high breakdown electric field, etc. It is suitable for manufacturing high-temperature, high-frequency, high-power, radiation-resistant, and corrosion-resistant electronic devices. Solid lighting, aerospace, communications, ocean exploration, earthquake prediction, oil drilling, and automotive electronic lamps are important fields, and are known as typical materials for third-generation semiconductors. At present, the physical vapor transport method (PVT method) is used for the crystal growth of most semiconductor integrated circuits commercially. At present, the growth of silicon carbide single crystal mainly adopts the PVT method. However, there...

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