Reverse IGBT (insulated gate bipolar transistor) device structure and manufacturing method therefor

Abstract

The invention relates to a reverse IGBT (insulated gate bipolar transistor) device structure, which comprises a first conduction type drift region, wherein a second conduction type base region is arranged in the first conduction type drift region, and the upper part of the second conduction type base region is provided with a first conduction type emission region; the second conduction type base region is isolated by a gate oxidation layer and the first conduction type drift region positioned under the gate oxidation layer; the gate oxidation layer is in contact with the second conduction type base region at the two sides and is in contact with the adjacent first conduction type emission region in the second conduction type base region; a polycrystal gate is arranged on the gate oxidation layer, and a gate electrode is arranged on the polycrystal gate; an emission electrode is arranged on the second conduction type base region and is in contact with the second conduction type base region and the first conduction type emission region in the second conduction type base region; and the bottom of the first conduction type drift region is provided with a second conduction type collector region, and a second conduction type collector metal region is arranged on the back surface of the first conduction type drift region. According to the reverse IGBT device structure, a back photolithography technique is avoided, and the probability of fragment and scratching in the tape-out process can be lowered.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a reverse conduction IGBT device structure and a manufacturing method, belonging to the technical field of IGBTs. Background technique [0002] IGBT is the acronym for Insulated Gate Bipolar Transistor. It is a voltage-controlled power device and is widely used as a high-voltage switch. [0003] When the traditional IGBT is subjected to reverse voltage, the collector junction is reverse-biased and cannot be turned on. The reverse conduction IGBT allows current to flow from the emitter to the collector when the IGBT is subjected to reverse voltage. The idea of ​​reverse conduction IGBT saves chip area, packaging, and testing costs, and reduces device costs. In addition, it also has low loss, good SOA (service-oriented architecture) characteristics, positive temperature coefficient, and good soft-off characteristics, short-circuit characteristics and go...

AI Technical Summary

Problems solved by technology

The back of conventional IGBTs are doped with P-type, while the reverse-conducting IGBT is partially doped with P-type and partially doped with N-type, so it is necessary to add a photolithography process on the back after the front process is completed, and this Due to the need for flipping, gluing, gluing, photolithography and other processes, it is easy to cause debris and scratches, thereby reducing the yield of tape-out

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