NandFlash bad block management method
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- FEITIAN TECHNOLOGIES
- Publication Date
- 2013-02-13
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Abstract
Description
technical field
[0001] The invention belongs to the field of memory, in particular to a NandFlash bad block management method. Background technique
[0002] NandFlash is a kind of Flash memory, which uses a non-linear macro-cell mode inside, which provides a cheap and effective solution for the realization of solid-state large-capacity memory. NandFlash memory has the advantages of large capacity and fast rewriting speed, and is suitable for the storage of large amounts of data, so it has been more and more widely used in the industry, such as embedded products including digital cameras, MP3 walkman memory cards, small and exquisite U disk, etc.
[0003] NandFlash has the possibility of bad blocks when it is used for the first time, and bad blocks will also be generated during use. Currently, the method of establishing a mapping table is used to manage bad blocks of NandFlash.
[0004] The inventor found in the process of realizing the present invention that at least the f...